TIP146T Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlington Power Transistor

, One.
10 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
J.S.A.
Silicon PNP Darlington Power Transistor
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FAX: [phone]
TIP146T
DESCRIPTION
• High DC Current Gain-
: hFE=1000(Min)@lc=-5A
• Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -SOV(Min)
• Complement to Type TIP141T
APPLICATIONS
• Designed for general purpose amplifier and low
frequency switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO ^{Collector-Base Voltage}
-80
V
VCEO ^{Collector-Emitter Voltage}
-80
V
VEBO ^{Emitter-Base Voltage}
-5
V
Ic
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
-15
A
IB
Base Current- Continuous
Collector Power Dissipation
PC
@TC=25°C
Tj
Junction Temperature
Tstg ^{Storage Temperature Range}
-0.5
A
80
W
150
•c
-55-150 -c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ^{Thermal Resistance, Junction to Case}
MAX UNIT
1.56 'CM/
- -N
{••
mm M • V V
V y Tj
jj
I |_ j
,2 o
•2
n K... i
L Jiif <-vw ' * ' iV." ^—~
R
^" 1 3
PIN 1.BASE
2. COLLECTOR
S.artlTTER
TO-220C package
«••••• B M
•*- V—H ,'-" ^r
t j o j_{3~G/ L}
X
A
;t'
— -poO
VL
* _H 1 .
K _CL
1 I MI
t
-K j
t^{-H G }•-}
Ji ^c
I
mm
DW WIN MAX
A 15.70 15.00
B 0.00 10.10
C 4.20 4.40
D 0.70 0.00
F 3.40 3.60
G 4.08 5.18
H 2.70 ^2.00
J 0.44 0.46
K 13.20 13.40
L 1.10 ^1.30
0 2.70 2.00
R 2.50 2.70
S 1.20 1.31
LI 6.45 6.65
V 8.66 8.86
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