TIP141T Datasheet, PDF (2/2 Pages) Fairchild Semiconductor – Monolithic Construction With Built In Base- Emitter Shunt Resistors

Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) ^{Collector-Emitter Sustaining Voltage} lc= 30mA, IB= 0
VcE(sat)-1 ^{Collector-Emitter Saturation Voltage lc=5A,lB=10mA}
VoE(sat)-2 ^{Collector-Emitter Saturation Voltage lc= 10A,lB=40mA}
VsE(sat) ^{Base-Emitter SaturationVoltage}
lc=10A,lB=40mA
VeE(on) ^{Base-Emitter On Voltage}
lc=10A;VCE=4V
ICBO
Collector Cutoff current
VCB= 80V, IE= 0
ICEO
Collector Cutoff current
VCE= 40V, IB= 0
IEBO
hpE-1
Emitter Cutoff Current
DC Current Gain
VEB= 5V; lc= 0
lc= 5A; VCE= 4V
hpE-2
DC Current Gain
lc=10A;VCE=4V
Switching Times
td
Delay Time
tr
Rise Time
tstg
Storage Time
tf
Fall Time
VCc = 30V, IC = 5.0A,
Duty Cycled 20%
TIP141T
MIN TYP. MAX UNIT
80
V
2.0
V
3.0
V
3.5
V
3.0
V
1
mA
2
mA
2
mA
1000
500
0.15
us
0.55
us
2.5
us
2.5
us