TIP141T Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – Monolithic Construction With Built In Base- Emitter Shunt Resistors

'I
C/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
ioducti, One.
Silicon NPN Darlington Power Transistor
TELEPHONE: [phone]
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FAX: [phone]
TIP141T
DESCRIPTION
• High DC Current Gain-
:hFE=1000(Min)@lc=5A
• Collector-Emitter Sustaining Voltage-
:VCEO(sus)=80V(Min)
• Complement to Type TIP146T
APPLICATIONS
• Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
Vcao Collector-Base Voltage
80
V
VCEO Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
I CM
Collector Current-Peak
10
A
15
A
IB
Base Current- Continuous
Collector Power Dissipation
PC
@T0=25°C
Tj
Junction Temperature
0.5
A
80
W
150
6C
Tstg
Storage Temperature Range
-55-150
'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ^{Thermal Resistance, Junction to Case}
MAX UNIT
1.56 "C/W
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4
mm
DIM WIN MAX
A 15.70 15.90
B 9.90 10.10
C 4.20 4.40
D 0.70 0.90
F 3.40 3.60
G 4.98 5.18
K 2.70 2.90
J 0.44 0.46
K 13.20 13.40
L 1.10 ^1.30
Q 2.70 2.90
R 2.50 2.70
$ 1.29 1.31
U 6.45 6.65
V 8.66 8.86
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductorsassumes no responsibility for any errors or omissions discovered in itsuse.
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