RFP8N20L Datasheet, PDF (2/2 Pages) Intersil Corporation – 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET

RFP8N20L
Absolute Maximum Ratings Tc = 25°c, Unless otherwise Specified
Drain to Source Voltage (Note 1 )
Drain to Gate Voltage (RQS = 20kQ) (Note 1 )
Continuous Drain Current
Pulsed Drain Current (Note 3)
Gate to Source Voltage
Maximum Power Dissipation
Above TC = 25°C, Derate Linearly
Operating and Storage Temperature
Maximum Temperature for Soldering
Leads at 0 063in (1 6mm) from Case for 10s
Package Body for 10s See Techbrief 334
. Vno
VnrR
... |n
Pn
Ti
RFP8N20L
200
200
8
20
10
60
0.48
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/°C
°C
°C
°C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Tj = 25°Cto 125°C.
Electrical Specifications Tc = 25°C, Unless otherwise specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
BVDSS ID = 250|iA, VGS = 0
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On-Voltage (Note 2)
Drain to Source On Resistance (Note 2)
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
VGS(TH)
toss
'GSS
VDS(ON)
rDS(ON)
'd(ON)
V
ld(OFF)
tf
CISS
coss
CRSS
R9JC
VGS = VDS, 'D = 250|iA
VDS = 0-8 x Rated BVDSS
Tc = 25°C
VDS = °-8 x Rated BVDSS
VGS= 10V, VQS =O
TC = 125°C
ID = 8A, VGS = 5V
ID = 4A, VGS = 5V
ID = 4A, VDD = 50V, RG = 6.25 , VGS = 5V
VGS = °V, VDS = 25V, f = 1 MHz
RFP8N20L
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD ISD = 4A
Diode Reverse Recovery Time
trr
ISD = 4A, dlSD/dt = 100A/HS
NOTES:
2. Pulsed: pulse duration = 300ns max, duty cycle = 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN TYP
200
-
1
-
-
-
-
-
-
-
-
-
-
-
-
15
-
45
-
100
-
60
-
-
-
-
-1 -
MAX UNITS
-
V
2
V
1
HA
50
jiA
100
nA
4.8
V
0.600
n
45
ns
150
ns
135
ns
105
ns
900
PF
250
PF
120
PF
2.083 °C/W
MIN TYP MAX UNITS
-
-
1.4
V
-
250
-
ns