RFP8N20L Datasheet, PDF (1/2 Pages) Intersil Corporation – 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET

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RFP8N20L
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8A, 200V, 0.600 Ohm, Logic Level,
N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is specifically designed for use with logic
level (5V) driving sources in applications such as
programmable controllers, automotive switching and
solenoid drivers. This performance is accomplished through
a special gate oxide design which provides full rated
conduction at gate biases in the 3V to 5V range, thereby
facilitating true on-off power control directly from logic circuit
supply voltages.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP8N20L
TO-220AB
RFP8N20L
NOTE: When ordering, include the entire part number.
Features
• 8A,200V
• rDS(0N) = o.eoon
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from QMOS, NMOS,
TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedence
• Majority Carrier Device
Symbol
D
O
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
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