RFP2N08L Datasheet, PDF (2/2 Pages) Intersil Corporation – 2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs

RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L
ELECTRICAL CHARACTERISTICS, Al Case Temperature (TC)=2$°C unless otherwise specified.
CHARACTERISTIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
" Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On Voltage
Static Drain-Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Thermal Resistance
Junction-lo-Case
SYMBOL
BVoos
V0,(th)
loss
loss
Voslon)'
ros(on)'
9..'
c,»
c«
c™
Won)
t,
td(Off)
t,
R0«
TEST
CONDITIONS
IDC1 mA
VQ3=0
Vas=Vra
I0=1 mA
VM=145V
VM=160V
TC=125°C
Vos=145V
Vos=160V
Vos=±10V
VDS-0
ID=1 A
Vos=5 V
I0=2A
Vos=5 V
b=1 A
Vos=5 V
VP8=10 V
lo=1 A
VDS=25 V
Vos=0 V
f=1MHz
V00=MOOV
b-1 A
R,.n=°°
R01>$.2S 0
VQS=5V
RFL1N18L,
RFL1N20L
RFP2N18L.
RFP2N20L
LIMITS
RFL1N18L
RFP2N18L
RFL1NZOL
RFP2N20L
MIN. MAX. MIN. MAX.
160
—
200
—
UNITS
V
1
2
1
2
V
1
1
/-A
-
50
-
50
—
100
—
100
nA
RFP —
3.5
—
3.5
RFL —
3.65
—
3.65
RFP —
9
—
9
RFL —
9.3
—
9.3
RFP —
3.5
—
3.5
RFL —
3.65
—
3.65
800
- 800
-
—
200
—
200
—
60
—
60
—
20
—
20
10(typ) 25 10(typ) 25
10(typ) 30 10(typ) 30
25(lyp) 40 25(typ) 40
tol-t4 _{20(typ) 25 20(typ) 25}
RFL 30(typ> 50 30(typ; 50
—
15
—
15
—
5
—
5
V
n
mmho
PF
ns
°C/W
•Pulsed: Pulse duration • 300 ^s max., duty cycle » 2%.
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
CHARACTERISTIC
SYMBOL
Diode Forward Voltage
VSD
Reverse Recovery Time
!„
•Pulse Test: Width < 300//s, duty cycle < 2%.
TEST
CONDITIONS
lso=1 A
lf-2A
diF/d,=60 M/JS
LIMITS
RFL1N18L
RFP2N18L
RFL1N20L
RFP2N20L
MIN.
_
MAX.
1.4
MIN.
_
MAX.
1,4
200{typ)
200(typ)
UNITS
V
ns