RFP2N08L Datasheet, PDF (1/2 Pages) Intersil Corporation – 2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs

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RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L
N-Channel Logic Level
Power Field-Effect Transistors (L2 FET)
1 and 2 A. 180V and 200V
rem: 3,5 fl and 3,65 0
Features:
• Design optimized lor 5 volt gale drive
• Can {>8 driven directly from Q-MOS, N-MOS, TTL Circuits
• Compatible with automotive drive requirements
• SOA is power-dissipation limited
• Nanosecond switching speeds
• Linear transfer characteristics
• High Input impedance
• jWa/or/fy carrier device
N-CHANNEL ENHANCEMENT MODE
RFL1N18L
RFL1N20L
TERMINAL DESIGNATIONS
The RFL1N18L and RFL1N20L and the RFP2N18L and
RFP2N20L are n-channel enhancement-mode silicon-gate
power, field-effect transistors specifically designed for use
with logic level (5 volt) driving sources In applications such
as programmable controllers, automotive switching, and
solenoid drivers. This performance Is accomplished through
a special gate oxide design which provides full rated con-
duction at gate biases In the 3-5 volt range, thereby facilitat-
ing true on-off power control directly from logic circuit
supply voltages.
The RFL-series types are supplied in the JEDEC TO-205AF
metal package and the RFP-saries types In the JEDEC TO-
220A8 plastic package.
RFP2N18L
RFP2N20L
JEDEC TO-205AF
JEDEC TO-220AB
MAXIMUM RATINGS, Absolute-Maximum Values (Te=25° C):
DRAIN-SOURCE VOLTAGE
VOM
DRAIN-GATE VOLTAGE (fV"1 MO) .... VOCB
GATE-SOURCE VOLTAGE
V0»
DRAIN CURRENT, RMS Continuous
I0
Pulsed
lou
POWER DISSIPATION @ Te=25° C
Pi
Derate above T0=25*C
OPERATING AND STORAGE
TEMPERATURE
T,. T,,,
RFL1N18L
180
180
1
8.33
0.0667
RFL1N20U
200
200
—
1
8.33
0.0667
±10
-55 to *150
RFP2N18L
180
180
2
25
0.2
RFPSN20L
200
200
2
25
0.2
V
V
V
A
A
W
wrc
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