RFP15N05L Datasheet, PDF (2/2 Pages) Fairchild Semiconductor – 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs

RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L
ELECTRICAL CHARACTERISTICS, At CM* T«mp»r«ture (Tc - 25°C) unlen otherwlta ipecllled
LIMITS
CHARACTERISTIC
SYMBOL
TEST
CONDITIONS
RFM1SN05L
RFP1SN05L
RFM15N06L
RFP15N06L
UNITS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Zero-Gate Voltage Drain
Current
BVoss
Vdsurn
loss
Gate-Source Leakage Current loss
Drain-Source On Voltage
Vos,onl«
Static Drain-Source On
Resistance
Forward Transconductance
rosfonl*
gt,'
Input Capacitance
C,,,
Output Capacitance
Con
Reverse-Transfer Capacitance Ow
Turn-On Delay Time
tdlon)
Rise Time
t,
Turn-Oil Delay Time
1 atom
Fall Time
ti
Thermal Resistance
RSjc
Junctlon-to-Case
ID • 1 mA
Vos = 0
Vgs = Vos
In =• 1 mA
VM • 40 V
VM = 50 V
Tc = 125° C
V0, = 40 V
' VD5 = 50 V
VQS = ±10V
Vos = 0
I0 = 7.5A
Vos • 5 V
ID = 15 A
Vos • 5 V
lo = 7.5A
Vas • 5 V
Vos = 10V
ID = 7.5 A
Vos = 25 V
V0« = 0 V
f = 1 MHz
VDD = 30 V
lo = 7.5 A
R,.» = ~
R0, = 6.25 n
Vas = 5 V
RFM15N05L,
RFM15N06L
RFP15N05L,
RFP15N06L
SOURCE-DRAIN DIODE RATINGS ANDCHARACTERISTICS
MIN.
MAX.
MIN.
50
-—
60
1
2
1
—
1
—
-
50
-
—
100
—
—
1.125
—
—
3.0
—
—
0.14
—
MAX.
—
V
2
V
1
0A
50
100
nA
1.125
V
3.0
0.14
n
4.0
_
„
—
16(typ)
250(typ)
200(typ)
225(typ)
-
-
_.
900
450
180
40
325
325
325
1.67
2.083
4.0
—
—
—
16(typ)
250(typ)
200(typ)
225(typ)
-
-
-
900
450
180
40
.325
325
325
1.67
2.083
mho
pF
ns
"C/W
LIMITS
CHARACTERISTIC
SYMBOL
TEST CONDITIONS
RFM15N05L
RFP15NOSL
RFM15N06L
RFP1SNOGL UNITS
MIN. MAX. MIN. MAX.
Diode Forward Voltage
Reverse Recovery Time
V5D»
In
I60 = 7.5A
IF = 4A, d,F/d, = 100A/J/S
-
1.4
225 (typ.)
1.4
V
226 (typ.)
ns
a Pulsed: Pulse duration = 300 fjs, duty cycle ~ 2%.