RFP15N05L Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs

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RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L
Power Logic Level MOSFETs
N-Channel Logic Level
TERMINAL DIAGRAM
Power Field-Effect Transistors (L2 FET)
15 A, 50 and 60V
ros(on):0.14n
Features:
Design optimized lor 5 volt gale drive
Can be driven directly from 0-MOS, N-MOS, TTL Circuits
Compatible with automotive drive requirements
SOA Is power-dissipation limited
Nanosecond switching speeds
Linear transler characteristics
High input impedance
Majority carrier device
N-CHANNEL ENHANCEMENT MODE
The RFM15N05L and RFM15N06L and the RFP15NOSL
and RFP15N06L* are N-channel enhancement-mode
silicon-gate power field-effect transistors designed for
applications such as switching regulators, switching
converter*, motor drivers, relay drivers, and drivers for
high-power bipolar switching transistors requiring high
speed and low gate-drive power, These types can be
operated directly from Integrated circuits.
The RFM-serlas types are supplied in the JEDEC TO-
204AA steel package and the RFP-series types in the
JEDEC TO-220AB plastic package.
Because of space limitations branding (marking) on type
RFP15N05L is F15NO5L and on type RFP1SN06L is
F15N06L.
RFM15N05L
RFM1SNOSL
RFP15NOSL
RFP15N06L
TERMINAL DESIGNATIONS
JEDEC TO-204AA
JEDEC TO-220AB
MAXIMUM RATINGS, Absolute-Maximum Valuas (fc » 25° C):
HFH15N05L
DRAIN-SOURCE VOLTAGE
V0,s
50
DRAIN-GATE VOLTAGE (R,. * 1 MD)
VOOR
SO
GATE-SOURCE VOLTAGE
V0s
DRAIN CURRENT, RMS Continuous
to
Pulsed
IOM
POWER DISSIPATION @ T C = !5°C
Pi
75
Derate above Tc = 26° C
0.6
OPERATING AND STORAGE
TEMPERATURE
T,. T.,0
RFM1SN06L
60
60
RFP1SN05L
SO
50
.40 .
75
60
0.6
0.46
. -55to*1SO-
RFP1SN06L
60
60
60
0.48
V
V
V
A
A
W
w/»c
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