RFP12N08L Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L
ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc)=25°C unless otherwise specified.
CHARACTERISTIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On Voltage
Static Drain-Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Thermal Resistance
Junction-to-Case
SYMBOL
BVDDS
Vos(th)
loss
less
VDS(on)'
ros(on)"
g»a
Cira
c^
c_
Won)
t,
td(Off)
t,
RAc
TEST
CONDITIONS
ID='I mA
VGS=O
Vos'Vos
I0=1 mA
VDS'=65 V
Vos =80 V
Tc=125°C
VDS:=65 V
VDS:=BO V
Vas=±10 V
VM*0
lo= 6 A
VG5=5 V
ID=12A
VM=5V
ID= 6 A
VQS=5 V
VDS;=10V
lo='6 A
Vos-25 V
VGS=0 V
f=1MHz
VDO;=50 V
ID=6A
f(il^=<x>
Ro.=6,25 O
VGS=5 V
RFM12N08L,
RFM12N10L
RFP12N08L,
RFP12N10L
LIMITS
RFM12NML
RFP12N08L
RFM12N10L
RFP12N10L
MIN.
MAX.
MIN.
MAX
80
—
100
—
1
2
1
2
1
1
—
50
—
50
—
100
—
100
—
1.2
—
1.2
—
3.3
—
3.3
—
0.2
—
0.2
4.0
-
—
900
—
325
—
170
I5(typ)
50
70(typ) 150
.100(typ) 130
80(tygL ¹⁵⁰
—
1.67
—
2.083
4.0
-
—
900
—
325
—
170
15(typ)
50
70(typ) 150
100(typ) 130
80(typ) 150
—
1.67
—
2083
UNITS
V
V
1*
nA
V
n
mho
pF
ns
"C/W
"Pulsed: Pulse duration = 300ps max., duty cycle - 2%.
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
CHARACTERISTIC
SYMBOL
Diode Forward Voltage
VSD
Reverse Recovery Time
t,,
•Pulse Test: Width < 3OOfJS, duty cycle < 2%.
TEST
CONDITIONS
lSD:--6 A
IF=4A
diF/dt=lOOA/0S
LIMITS
RFM12N08L
RFM12N10L
RFP12N08L , RFP12N10L
MIN.
MAX.
MIN.
MAX.
—
1.4
—
1.4
150(typ)
150(typ)
UNITS
V
ns