RFP12N08L Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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FAX: [phone]
RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L
N-Channel Logic Level
Power Field-Effect Transistors (L2 FET)
12 A, 80V and 100V
ros(on): 0.2 n
Features:
• Design optimized tor 5 volt gate drive
• Can be driven directly from Q-MOS, N-MOS, TTL Circuits
• Compatible with automotive drive requirements
• SOA is power-dissipation limited
• Nanosecond switching speeds
• Linear transfer characteristics
• High input impedance
• Ma/ority carrier device
N-CHANNEL ENHANCEMENT MODE
The RFM12N08L and RFM12N10L and the RFP12N08L and
RFP12N10L' are n-channel enhancement-mode silicon-gate
power field-effect transistors specifically designed for use
with logic level (5 volt) driving sources in applications such
as programmable controllers, automotive switching, and
solenoid drivers. This performance is accomplished through
a special gate oxide design which provides full rated con-
duction at gate biases in the 3-5 volt range, thereby facilitat-
ing true on-off power control directly from logic circuit
supply voltages.
The RFM-series types are supplied in the JEDEC TO-
204AA steel package and the RFP-series types in the
JEDEC TO-220AB plastic package.
Because of space limitations branding (marking) on type
RFP12N08L isFl2N08L and on typeRFP12N10L is
F12N10L.
RFM12N08L
RFM12N10L
TERMINAL DESIGNATIONS
JEDEC TO-204AA
RFP12N08L
RFP12N10L
o ^{DRAIN _»}
(FLANGE)
p SOURCE
=!— i
JEOEC TO-220AB
MAXIMUM RATINGS, Absolute-Maximum Values (7>25° C):
DRAIN-SOURCE VOLTAGE
• Voss
DRAIN-GATE VOLTAGE (R ,= 1MO) .. .. Vow
GATE-SOURCE VOLTAGE
. . V<J8
DRAIN CURRENT. RMS Continuous . . ID
Pulsed
lou
POWER DISSIPATION @ ^=^2255°-C ... PT
Derate above TC-T25° C
OPERATING AND STORAGE
TEMPERATURE
T,, T.
RFM12N08L
80
80
RFM12N10L
100
100
rs
75
0.6
0.6
±10
12
30
-55 to+150
RFP12NOSL
80
80
60
0.48
RFP12N10L
100
100
60
0.48
V
V
A
A
W
W/°C
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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