RFM5P12 Datasheet, PDF (2/2 Pages) Mospec Semiconductor – P - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS

RFM5P12, RFM5P15, RFP5P12, RFP5P15
CHARACTERISTIC
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Zero-Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On Voltage
Static Drain-Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Thermal Resistance Junctlon-to-Case
SYMBOL
TEST
CONDITIONS
LIMITS
RFM5P12
RFM5P15
RFP5P12
RFP5P15
Mln. Max. Mln. Max.
UNITS
BVDS8
VGSHM
loss
loss
Vostonl
roSlon)
g..'
Ci.,
Co..
c™
tdlonl
t,
tflwin
It
R«JC
ID = 1 mA
Vos = 0
-120
- -150
-
Vos = Vos
-2
-4
-2
-4
ID = 1 mA
Vos = -100 V
:¹
—
VDS = -120 V
1
TC=125°C
VDS = -W>0 V
- 50
-
Vos = -120V
Vos = ±20 V
Voa = 0
ID = 2.5 A
Vos =-10 V
lo = 5A
VGS = -10 V
ID = 2,5 A
VM = -10 V
-
100
-
50
100
- -2.5
- -2.5
-
-8
-
-8
-1
-
1
Vos = 10 V
lo = 2.5 A
0.75
- 0.75
-
Vos = 25 V
Vas = 0 V
—
700
—
700
—
300
„ ₃₀₀
f = 1MHz
—
100
—
100
VDD - 1/2 BVoss 20(typ.) 60 20(typ.) 60
ID = 2.5 A 36(typ.) 100 36(typ.) 100
Ra.n = Rj, = 50fl 63(typ.) 150 63(typ.) 150
Vos = 10 V 40(typ.l 100 40(typ.) 100
RFM5P12,
RFM5P15
- 1.67 - 1.67
RFP5P12.
RFP5P15
- 2.063 - 2.083
V
V
M
nA
V
n
mho
PF
ns
"C/W
•Pulsed: Pulse duration - 300 AIS max., duty cycle - 2%.
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
CHARACTERISTIC
SYMBOL
TEST
CONDITIONS
Diode Forward Voltage
VSD
Reverse Recovery Time
U
•Pulse 1 a,'.; Width < 300 jis, Duty Cycle < 2%.
Iso = 2.5A
U = 4A
d,F/d, - 100A/«(s
LIN TS
HFM5P12
RFMSP1S
RFPSP12
RFP5P15
Mln.
Max.
Min.
Max.
-
1.4
—
1.4
300{typ.)
' 300(typ.)
UNITS
V
ns