RFM5P12 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – P - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS

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RFM5P12, RFM5P15, RFP5P12, RFP5P15
P-Channel Enhancement-Mode
Power Field-Effect Transistors
5 A, 120V— 150V
Featurer
SOA Is power-dissipation limited
Nanosecond switching speeds
Linear transfer characteristics
High Input Impedance
Majority carrier device
P-CHANNEL ENHANCEMENT MODE
The RFMSP12 and RFM5P15 and the RFP5P12 and RFP5P15 •
are P-Channel enhancement-mode silicon gate power
field-effect transistors designed forhlgh-speed applications
such as switching ragulators, switching converters, relay
drivers, and drivers for high-power bipolar switching
transistors.
The RFM-Series types are supplied In the JEDEC TO-
204AA metal package and the RFP-Serles types in the
JEDEC TO-220AB plastic package. All these types are
supplied without an internal gate Zener diode.
RFM5P12
RFM5PI5
TERMINAL DESIGNATIONS
JEDEC TO-204AA
JEDEC TO-220AB
MAXIMUM RATINGS, Absolute-Maximum Values (TC = 25°C):
RFM5P12 RFM5P15
RFP5P12
DRAIN-SOURCE VOLTAGE
ORAIN-QATE VOLTAG£ E (R , (Rg0g —1 Mil)
GATE-SOURCE VOLTAGE
DRAIN CURRENT RMS
Pulsed
POWER DISSIPATION
@ Tc = 25-C
Derate above Tc = 25°C
OPERATING AND STORAGE TEMPERATURE
VOOR
PT
T,. T,«
-120
0.6
-150
-120
60
0.6
0.48
. -55 to +150 -
RFP5P1S
-150
60
0.46
V
V
V
A
A
W
W/'C
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