RFM15N12 Datasheet, PDF (2/2 Pages) GE Solid State – N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSSITORS

RFM15N12, RFM15N15, RFP15N12, RFP15N15
ELECTRICAL CHARACTERISTICS At Case Temperature (Te) = 25°C unle$s otherwise specified ,
CHARACTERISTICS
SYMBOL
TEST
CONDITIONS
LIMITS
RFM16N12
RFM15N15
RFP1SN12
RFP18N15
MIN. MAX. MIN. MAX.
UNITS
Drain-Source Breakdown Voltage
BVDas
lo = 1 mA
V<» = 0
120
- 150
-
V
Gate Threshold Voltage
Vasiiiu
Vos = Vos
2
4
2
4
V
lo = 1 mA
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
VDS = 100 V
1
Vos = 120V
-
1
IMS
Tc = 125°C
//A
VDS - 100 V
-
50
VDS = 120 V
50
Vas = ± 20 V
loss
-
100
-
100
nA
Vos = 0
Drain-Source On Voltage
Static Drain-Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDs(on)'
ros(on)'
g,.'
CiM
COM
c«
td(on)
t,
Wolf)
t<
ID = 7.5 A
Vas = 10 V
ID = 15 A
Vas = 10 V
- 1.125 - 1.125
-
3
-
3
• ID = 7.5 A
VOS = 10V
- 0,15 - 0,15
V05 = 10 V
ID = 7.6 A
5
-
5
-
VDS = 25 V
Vas = 0 V
f=1MHz
VeD=75 V
ID = 7.5 A
Rj.n = R8. = 50 O
VOB = 10 V
_
—
50(typ.)
1SO(typ.)
185(typ.)
126(typ.)
1700
750
350
75
225
2BO
190
_
„
50{typ.)
150{typ.)
185(typ.)
125(typ.)
1700
750
350
75
225
260
190
V
n
mho
pF
ns
Thermal Resistance
Junction-to-Case
R0JC
RFM15N12,
RFM15N15
RFP15N12.
RFP15N15
- 1.25 - 1.25
"C/W
-
1.67
-
1.67
•Pulsed: Pulse duration = 300 ps max., duty cycle = 2%.
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
CHARACTERISTIC
SYMBOL
Diode Forward Voltage
VSD
Reverse Recovery Time
!„
'Pulse Test: Width '- 300 fja, duty cycle £ 2%.
TEST
CONDITIONS
lso=7.5A
IF=4A
d,F/d,=100A//ffi
LIMITS
RFM15N12
RFP15N12
RFM15N15
RFP15N15
MIN. MAX. MIN. MAX.
—
1.4
—
1,4
200(typ)
200(typ)
UNITS
V
ns