RFM15N12 Datasheet, PDF (1/2 Pages) GE Solid State – N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSSITORS

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RFM15N12, RFM15N15, RFP15N12, RFP15N15
N-Channel Enhancement-Mode
Power Field-Effect Transistors
15 A, 120V — 1 5 0 V
ro«(on): 0.15 n
Features:
• SO/A Is power-dissipation limited
• Nanosecond switching speeds
• Linear transfer characteristics
• High Input Impedance
• Ma/ority carrier device
N-Channel Enhancement Mode
RFM15N12
RFM1SN15
TERMINAL DESIGNATIONS
The RFM15N12 and RPM15N1S and the RFP15N12 and
RFP15N15'are n-channel enhancement-mode silicon-gate
power field-effect transistors designed for applications
such as switching regulators, switching converters, motor
drivers, relay drivers, and drivers for high-power bipolar
switching transistors requiring high speed and low gate-
drive power. These types can be operated directly from
integrated circuits.
The RFM-lypes are supplied in the JEDEC TO-204AA steel
package and the RFP-types In the JEDEC TO-220AB plastic
package.
.....
RFP15N12
RFP15N15
IFLANSE)"
GATE
JEDEC TO-204AA
JEDEC TO-220AB
MAXIMUM RATINGS, Absolute-Maximum Values (TC=25°C):
DRAIN-SOURCE VOLTAGE
DRAIN-GATE VOLTAGE (Ros=1 MO)
GATE-SOURCE VOLTAGE
DRAIN CURRENT RMS Continuous
Pulsed
POWER DISSIPATION
@Tc=2S'C
Derate above TC-25°C
OPERATING AND STORAGE
TEMPERATURE
VD
Vo
V
b
TI, T.,
RFM15N12 RFM15N15
120
150
120
150
100
100
0.80
0.80
-55 to +1SO
RFP15N12
120
120
76
0.6
RFP1SN16
1SO
150
75
0.6
V
V
V
A
A
W
W/°C
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