RFL1N10 Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs

Absolute Maximum Ratings Tc = 25°C, Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1 )
......................
VQS
Drain to Gate Voltage (RGS = 1Mfl) (Note 1)
.....................
VDGR
Continuous Drain Current
.......................................
ID
Pulsed Drain Current
.........................................
IQM
Gate to Source Voltage
......................................
VGg
Maximum Power Dissipation
...................................
PD
Linear Derating Factor
...........................................
Operating and Storage Temperature
........................
Tj, TgjG
Maximum Temperature for Soldering
Leads at 0.063in (1 .6mm) from Case for 1 0s
Package Body for 10s, See Techbrief 334
......................
......................
TL
Tpkg
RFL1N18
1 80
180
1
5
±20
8.33
0.0667
~55 to 150
300
260
RFL1N20
200
200
1
5
+20
8.33
0.0667
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/°C
°C
°C
°C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
= 25°Cto125°C.
Electrical Specifications Tc = 25°C, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
RFL1N18
SYMBOL
TEST CONDITIONS
BVDSS ^{ID = 250M.A, VGS= °v}
RFL1N20
Gate Threshold Voltage
Zero Gate Voltage Drain Current
VGS(TH)
toss
VGS = VDS, to = 250nA, (Figure 8)
VDS = °-8 x Rated
BVDSS
Tc = 25°C
Tc = 125°C
Gate to Source Leakage Current
Drain to Source On-Voltage (Note 2)
'GSS
VDS(ON)
VGS = ±20V, VDS= 0 \/
ID = 1A,VGS = iov
ID = 2A, VGS= 10V
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
rDS(ON)
9fs
ld(ON)
tr
ld(OFF)
tf
CISS
coss
CRSS
RSJC
ID = 1A, VGS = 10V, (Figures 6, 7)
ID = 1A,VDS= 10V, (Figure 10)
ID = 1A, VDD = ioov RGS = son,
VGS = 10V, (Figures 11, 12, 13)
VGS = OV, VDS = 25V f = 1MHz,
(Figure 9)
MIN TYP MAX UNITS
180
_
_
V
200
-
-
V
2
-
4
V
-
-
1
HA
-
-
25
|xA
-
-
±100
nA
-
-
3.65
V
-
-
8.3
V
-
-
3.65
n
400
-
-
s
-
15
25
ns
-
20
30
ns
-
25
40
ns
-
30
50
ns
-
-
200
pF
-
-
60
PF
-
-
25
PF
-
-
15
°C/W
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage (Note 2)
Diode Reverse Recovery Time
SYMBOL
TEST CONDITIONS
VSD
trr
ISD=1A
ISD = 2A, dlSD/dt = SOA/ns
MIN TYP MAX UNITS
-
-
1.4
V
-
200
-
ns