RFL1N10 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs

J.E.IS.S.U
C/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One,.
RFL1N18,
RFL1N20
1A, 180V and 200V, 3.65 Ohm,
N-Channel Power MOSFETs
TELEPHONE: [phone]
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FAX: [phone]
Features
• 1 A, 180V and 200V
• rDS(ON) = 3.65Q
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Symbol
OD
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFL1N18
TO-205AF
RFL1N18
RFL1N20
TO-205AF
RFL1N20
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-205AF
DRAIN -
(CASE)
GATE
SOURCE
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductorsassumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductorsencouragescustomers to verify that datasheets are current before placing orders.
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