RFH35N10 Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – Power MOS Field-Effect Transistors

RFH35N08, RFH35N10
ELECTRICAL CHARACTERISTICS. •< Gait Temperature (Tc) = 25° C unl*M oth«rwl*» *p»Cl(l«d.
CHARACTERISTIC
TEST
SYMBOL CONDITIONS
LIMITS
RFH35N08
RFH3SN10
UNITS
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Zero Gals Voltage Drain
Current
Gate-Source Leakage
Current
Drain-Source On Voltage
BVoss
Vas(th)
lass
loss
Vos{on)«
ID - 1 rnA
Vos = 0
VH5 = VDB
IB = 1 mA
VDS - 65 V
Vos = 80 V
TC = 125°C
VDS = 65 V
Vos - 80 V
Vos = ± 20 V
Vos-0
lo =17.5 A
Vos • 10V
Static Drain-Source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Thermal Resistance
Junction-to-Case
rns(on)*
g..»
C,,.
C...
C™
ti(on)
t,
to(Off)
t<
R«JC
ID = 35 A
Vos - 10 V
lo = 17.5 A
Vos = 10 V
Vos = 10V
lo= 17.5 A
Vos = 25 V
Vas = 0 V
f = 1 MHz
VDD = 50 V
I0 = 17.5 A
twn,.»son
V08 = 10V
RFH35N08,
RFH3SN10
Series
•Pulsed: Puise duration = 300 /is max., duty cycle = 2%.
Mln.
80
2
-
—
—
—
—
10
—
—
—
45(typ)
225(typ)
240(typ)
185(typ)
-
Max.
—
4
1
50
100
0.963
3.0
0.055
—
3000
1500
600
100
450
450
350
0.63
Mln.
100
2
-
—
—
—
—
10
—
—
-
45(typ)
225(typ)
240(typ)
165(typ)
-
Max.
—
4
1
50
100
0.963
3.0
0.055
—
3000
1500
600
100
450
450
350
0.63
V
V
pA
nA
V
Q
mho
PF
ns
°C/W
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
LIMITS
CHARACTERISTIC
TEST CONDITIONS
RFH35N08
RFH35N10 UNITS
Mln. Max. Mln. Max.
Diode Forward Voltage
VSD '
!SD= 17.5A
-
1.4
-
1.4
V
Reverse Recovery Time
tn
IF - 4A, dif/d, = 100A//JS
200 (typ.)
200 (typ.)
ns
' Pulsed: Pulse duration ~ 300 /is max., duty cycle = 2%.