RFH35N10 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Power MOS Field-Effect Transistors

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SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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RFH35N08, RFH35N10
Power MOS Field-Effect Transistors
N-Chanhel Enhancement-Mode
Power Field-Effect Transistors
35 A, 8 0 V - 1 0 0 V
rosiom = 0.055 O
Features:
SOA Is power-dissipation limited
Nanosecond switching speeds
Linear transfer characteristics
High Input Impedance
Majority carrier device
High-current, low-Inductance package
TERMINAL DIAGRAM
D
N-CHANNEL ENHANCEMENT MODE
The RFH35N08 and RFH35N10* are n-channel enhance-
ment-mode silicon-gate power field-effect transistors
designed for applications such as switching regulators,
switching converters, motor drivers, relay drivers, and
drivers for high-power bipolar switching transistors
requiring high speed and low gate-drive power. These types
can be operated directly from integrated circuits.
The RFH-types are supplied In the JEDEC TO-21BAC
plastic package.
TERMINAL DESIGNATIONS
JEDEC TO-218AC
MAXIMUM RATINGS, Absolute-Maximum Values (Ta = 25°C):
DRAIN-SOURCE VOLTAGE
DRAIN-GATE VOLTAGE. R,. • 1 MO
GATE-SOURCE VOLTAGE
DRAIN CURRENT. RMS Continuous
Pulsed
POWER DISSIPATION @ T0 = 25° C
Derate above Tc » 85° C
OPERATING AND STORAGE TEMPERATURE.
Voss
VOOR
Voa
ID
IDM
Pi
.Ti, T,,,
RFH35N08 HFH35N10
80
100
80
100
±20
35
100
150
1.2
.-5510*160.
V
V
V
A
A
W
W/«C
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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