PT9730 Datasheet, PDF (2/2 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

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PT9730 Series
ELECTRICAL CHARACTERISTICS — continued
I
Characterise
FUNCTIONAL TESTS
Common-Emitter Amplifier Power Gain
(VCE - 28 V, Pout = Rated, f = 175 MHz)
PT9730
PT9732
PT9734
PT9731
Collector Efficiency (VCE - 28 V, Pout = Rated, f = 175 MHz)
Load Mismatch
(VCE = 28 V, Pout = Rated, f = 175 MHz,
Load VSWR = o°:1. All Phase Angles)
Saturated Output Power
(VcE = 28 V, f = 175 MHz)
PT9730
PT9732
PT9734
PT9731
Symbol
GpE
1C
*
Psat
TYPICAL CHARACTERISTICS
PT9730 — 4 WATTS
Mln
Typ
Max
Unit
13
dB
12
-
11.8
-
10
60
—
-
%
No Degradation in
Output Power
6
W
10
-
18
-
30
. V/-C
24V
/,_/
/, ^20V
'// ^{/ ^}
&^/
J
/
V
f = 1 5MHl
0.1 0.2 03 0.4 0.5 0.6
Pin. POWER INPUT (WATTS)
Rgure 1. Power Input versus Power Output
7
100 120 140 160 180 200 220
f, FREQUENCY iMHil
Rgure 2. Power Gain versus Frequency
60
</> -1
= 4W
• = 28V
-5
100 120 140 160 180 200 220
f, FREQUENCY IMHzl
Figure 3. Series Input Impedance versus Frequency
looo
sv
"0
0.1
0.2
0.3
0.4
0.5
It COLLECTOR CURRENT (AMPS)
Figure 5. Cutoff Frequency versus Current
Quality Semi-Conductors
100 120 140 160 180 200 220
I, FREQUENCY IMHz)
Rgure 4. Series Load Impedance versus Frequency
\ 25
\
.
T(
2
5 10 20 SO 100
VCE, COLLECTOn-TO-EMITTER VOLTAGE (V)
Rgura 6. Safe Operating Area