PT9730 Datasheet, PDF (1/2 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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The RF Line
VHF Power Transistors
... designed primarily for wideband, large-signal output amplifier stages in the
30-200 MHz frequency range.
• Guaranteed Performance at 175 MHz, 28 Vdc
Output Power — 4 to 25 Watts
Minimum Gain — 10 to 13 dB
Collector Efficiency — 60%, Min
• 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR
• Gold Metallization for Improved Reliability
• Diffused Ballast Resistors
PT9730
Series
10 TO 13 dB
TO 200 MHz
4 TO 25 WATTS
VHF POWER
TRANSISTORS
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current — Continuous
Total Device Dissipation (S TC = 25°C
Derate above 25°C
Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage dc = 25 mA, Ig = 0)
Collector-Emitter Breakdown Voltage dc - 50mA. VBE - 0)
Emitter-Base Breakdown Voltage HE = 1 mA, Ic = 0)
Collector Cutoff Current
(VcE = 25 V. VBE = °>
ON CHARACTERISTICS
DC Current Gain dc = 500 mA. VCE = 10 V)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 V, IE = 0. f = 1 MHz)
Symbol
VCEO
VCES
VEBO
ic
PD
Tj
Tstg
9730
1
10
0.06
9732 9734
35
60
4
1.25 2.5
20 30
0.114 0.173
200
-65 to +150
9731
4
45
0.257
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Symbol
Max
Unit
RWC
17.5 8.8 5.8 3.9
°c/w
Symbol
Min
Typ
Max
Unit
VIBRICEO ³⁵
—
—
Vdc
V(BR)CES
60
—
—
Vdc
V(BR)EBO
4
-
—
Vdc
PT9730 _ICES
0.5
mAdc
PT9732
-
-
1
PT9734
1.5
PT9731
2
"FE
20
_
150
—
PT9730
Cob
12
pF
PT9732
-
18
PT9734
-
24
PT9731
40
Quality Semi-Conductors