MTP12N10E Datasheet, PDF (2/2 Pages) Motorola, Inc – TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM

ELECTRICAL CHARACTERISTICS ITc - 25°C unless otherwise noted)
Ch*r»«tw<*tic
Symbol
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS - o, ID = 0.25 mA>
V(BR)DSS
Zero Gate Voltage Dram Current
IDSS
(VDS = R*'«d VDSS. VGS = oi
(VDS = Rated VDSS- VQS = 0, Tj = 125°C)
Gate-Body Leakage Current, Forward (VQSF = 20 Vdc, VDS " °)
Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = °>
ON CHARACTERISTICS*
'GSSF
IGSSR
Gate Threshold Voltage
(VDS = VGS. ID = 1 mA)
Tj = 100°C
vGS(tn>
Static Drain-Source On Resistance (VQS= 10Vdc, ID = 6Adc)
RDS(on)
Dram-Source On-Voltaga (Vrjg = 10 V)
(ID = 12Adc)
(ID - 6 Adq, Tj = 100°C)
vDS(on)
Forward Transconduciancs (Vog = 15 V, ID - 6 A)
9FS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS ~ 25 v. VGS ~ °'
f - 1 MHzl
See Figure 11
SWITCHING CHARACTERISTICS* (Tj = 100"C)
Ciss
CDSS
Crss
Turn-On Delay Time
Rise Time
(VDD = 25 V, ID = O.S Rated ID
td(on)
<r
Turn-Qff Delay Time
Fall Time
See Figures 9, 13 and 14
ld(off)
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
IVos - 0.8 Rated VDSS'
Q9
ID = Rated ID, VGS = 10 V)
Q9s
See Figure 12
Ogd
SOURCE DRAIN DIODE CHARACTERISTICS*
Forward On-Voltage
Forward Turn-On Time
(IS = Rated ID
VSD
VGS = 0)
'on
Reverse Recovery Time
trr
INTERNAL PACKAGE INDUCTANCE (TO-204)
Internal Drain Inductance
Ld
(Measured from the contact screw on the header closer
to the source pin and the center of the die)
Internal Source Inductance
LS
(Measured from the source pin, 0 25" from the package
to the source bond pad)
INTERNAL PACKAGE INDUCTANCE (TO-220)
Internal Drain Inductance
Ld
(Measured from the contact screw on tab to center of die)
(Measured from the dram lead 0.25" from package to center of die)
Internal Source Inductance
LS
(Measured from the source lead 0 25" from package to source bond pad.l
•Pulse Test Pulse Width '. 300 MS, Duty Cycle ', 2%
Min
Max
Unit
100
—
Vdc
jiAdc
—
10
100
—
100
nAdc
—
100
nAdC
2
4.5
Vdc
1.5
4
—
0.18
Ohm
Vdc
—
2.6
2.2
3
—
mhos
—
800
PF
—
400
—
100
—
50
ns
—
150
—
200
—
100
17 (Typ)
36
nC
8 (Typ)
_
9 (Typl
—
1.2 (Typ).
2.5
Vdc
Limited by stray inductance
325 (Typ)
-
| ns
5 (Typ)
nH
12.5 (Typ)
"
nH
3 5 (Typ)
—
4 5 (Typl
7 5 (Typl
—