MTP12N10E Datasheet, PDF (1/2 Pages) Motorola, Inc – TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM

J.E.I±E.U
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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Designer's Data Sheet
Power Field Effect Transistor
N-Channel Enhancement-Mode
Silicon Gate
These TMOS Power FETs are designed for medium voltage,
high speed power switching applications such as switching regu-
lators, converters, solenoid and relay drivers.
• Silicon Gata for Fast Switching Speeds — Switching Times
Specified at 100°C
• Designer's Data — IDSS. Vostonl- vGS(th| and SOA Specified
at Elevated Temperature
• Rugged — SOA is Power Dissipation Limited
• Source-to-Orain Diode Characterized for Use With Inductive Loads
MTM12N10
*MTP12N10E
TMOS POWER FETs
12 AMPERES
RDS(on) = 0-W OHM
100 VOLTS
MAXIMUM RATINGS
Plating
Symbol
Drain-Source Voltage
Drain-Gate Voltage (RQS = 1 Mfi)
Gate-Source Voltage
Continuous
Non-repetitive (tp * 50 us]
Drain Current — Continuous
— Pulsed
Total Power Dissipation @ Tc = 25°C
Derate above 25°C
VDSS
VDGR
VGS
VQSM
ID
IDM
PD
Operating and Storage Temperature Range
Tj-Tjjtg
THERMAL CHARACTERISTICS
Thermal Resistance
Junction to Case
Junction to Ambient
TO 204
TO-220
Maximum Lead Temperature for Soldering TO-220
Purposes, V8" from case for 5 seconds TO-204
R0JC
R0JA
TL
Value
100
100
±20
±40
12
30
75
0.6
-65 to 150
1.67
30
62.5
260
300
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Watts
W7°C
°C
°C/W
°C
MTM12N10
TO-204AA
MTP12N10E
TO-220AB
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