MRF899 Datasheet, PDF (2/2 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (Tc = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL CHARACTERISTICS
Common-Emitter Amplifier Power Gain
Vcc = 26 Vdc, Pout = 150 Watts (PEP), lcq = 300 mA, (•, = 900 MHz,
f2 = 900.1 MHz
Gpe
8.0
9.0
"
dB
Collector Efficiency
n
30
40
%
VCc = 26 Vdc, Pout = 150 Watts (PEP), lcq = 300 mA, f, = 900 MHz,
f2 = 900.1 MHz
3rd Order Intermodulation Distortion
IMD
Vcc = 26 Vdc, Poul = 1 50 Watts (PEP), !„, = 300 mA, f ! = 900 MHz,
f2 = 900.1 MHz
-32
-28
dBc
Output Mismatch Stress
V
VCc = 26 Vdc, POU| = 150 Watts (PEP), !„, = 300 mA, (-, = 900 MHz,
f2 = 900.1 MHz, VSWR = 5:1 (all phase angles)
No Degradation in Output Power
Before and After Test
o" a, o, a, a, ri o,
VBB
T *J^ns ^^ r? ^J^fitn *^*f*i? **rid **'P1?
JP-
BALUN2
INPUT).
OUTPUT
C26
VB
61, B2 — Ferrite Bead, Ferroxcube #56-590-65-36
C1, C2, C24, C25 — 43 pF, B Case, ATC Chip Capacitor
C3, C4, C20. C21 —100 pF, B Case, ATC Chip Capacitor
C5, C6, C12, C13 —1000 pF, B Case, ATC Chip Capacitor
C7, C8, C14, C15 — 1800 pF, AVX Chip Capacitor
C9 — 9.1 pF, A Case, ATC Chip Capacitor
C10, C11, C17, C18, C22, C23 — 10 (iF, Electrolytic Capacitor
Panasonic
C16 — 3.9 pF, B Case, ATC Chip Capacitor
C19 — 0.8 pF, B Case, ATC Chip Capacitor
C26 — 200 uF, Electrolytic Capacitor Mallory Sprague
C27 — 500 uF Electrolytic Capacitor
L1 — 5 Turns 24 AWG IDIA 0.059" Choke, 19.8 nH
12, L3, L7, L9 — 4 Turns 20 AWG IDIA 0.163" Choke
L4, L5, L6, L8 — 12 Turns 22 AWG IDIA 0,140" Choke
N1, N2 — Type N Flange Mount, Omni Spectra
01 — Bias Transistor BD136 PNP
R2, R3, R4, R5 — 4.0 x 39 Ohm 1/8 W Chips in Parallel
R1a, R1b — 56Ohm LOW
TL1-TL8 — See Photomaster
Balun!, Balun2, Coax 1, Coax 2 — 2.20" 50 Ohm 0.088" o.d.
Semi-rigid Coax, Micro Coax
Board — 1/32" Glass Teflon, e, = 2.55" Arton (GX-0300-55-22)
Figure 1. 900 MHz Power Gain Test Circuit