MRF899 Datasheet, PDF (1/2 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

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Cs
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
TELEPHONE: [phone]
[phone]
FAX: [phone]
The RF Line
NPN Silicon
RF Power Transistor
Designed for 26 Volt UHF large-signal, common emitter, Class AB linear
amplifier applications in industrial and commercial FM/AM equipment operating
in the range 800-960 MHz.
• Specified 26 Volt, 900 MHz Characteristics
Output Power = 150 Watts (PEP)
Minimum Gain = 8.0 dB @ 900 MHz, Class AB
Minimum Efficiency = 35% @ 900 MHz, 150 Watts (PEP)
Maximum Intermodulation Distortion -28 dBc @ 150 Watts (PEP)
• Characterized with Series Equivalent Large-Signal Parameters from 800
to 960 MHz
• Silicon Nitride Passivated
• 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR
@ 26 Vdc, and Rated Output Power
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MRF899
1 SOW,900 MHz
RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction to Case
ELECTRICAL CHARACTERISTICS (Tc = 25"C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage Oc - 100 mAdc, IB - 0)
Collector-Emitter Breakdown Voltage (Ic = 50 mAdc, VBE = 0)
Emitter-Base Breakdown Voltage (IE = 10 mAdc, Ic = 0)
Collector Cutoff Current (VCE = 30 Vdc, VBE = 0)
V(BR)CEO
V(BR|CES
V(BR)EBO
ICES
ON CHARACTERISTICS
DC Current Gain (ICE = 1.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 26 Vdc, IE = 0, f = 1.0 MHz) (1)
Cob
(1) For information only. This part is collector matched.
CASE 375A-01, STYLE 1
Symbol
VCEO
VCES
VEBO
"c
PD
Tslg
Symbol
RBJC
Value
28
60
4.0
25
230
1.33
-65 to + 150
Max
0.75
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
Unit
°C/W
Min
Typ
Max
Unit
28
37
—
Vdc
60
85
—
Vdc
4.0
4.9
—
Vdc
—
„
10
mAdc
30
75
120
75
(continued)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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