MRF857S Datasheet, PDF (2/2 Pages) Motorola, Inc – NPN SILICON RF POWER TRANSISTOR

ELECTRICAL CHARACTERISTICS — continued
Characteristic
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 A, VCE = 5V)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VcB = 24V, f= 1 MHz)
FUNCTIONAL CHARACTERISTICS
Common-Emitter Power Gain
(VCE =24 V, Ic = 0.3 A, f = 840-900 MHz,
Power Output = 2.1 W)
Load Mismatch
(P0 = 2.1 W)
(VCE =24 v. !C = O-3 A.f = 840 MHz,
Load VSWR = 30:1 , All Phase Angles)
RF Input Overdrive
(VCE = 24 V, IC = 0.3 A, f = 840 MHz)
No degradation
Third Order Intercept Point
(VCE = 24 V, IC = 0.3 A)
(f1 =900 MHz, f2 = 900.1 MHz,
Meas. @ IMD 3rd Order = -40 dBc)
Noise Figure
(VCE = 24 V, Ic = 0.3 A, f = 900 MHz)
Input Return Loss
(VCE = 24 V, Ic = 0.3 A, f = 840-900 MHz,
Power Output = 2.1 W)
Symbol
hFE
Win I Typ [ Max
30
60
120
Unit
—
cob
2.4
3.3
4.4
pF
pg
V
pin(over)
ITO
12.5
13.5
._
No Degradation in
Output Power
~
~
0.4
+ 43
+ 44.5
dB
W
dBm
NF
—
5.25
—
dB
IRL
-15
-10
dB
Table 1. MRF857S Common Emitter S-Parameters
VCE "C
f
(V)
(A) (MHz)
S11
|S«|
./*
24
0.3 800
0.915
165
820
0.915
165
840
0.915
165
860
0.913
164
880
0.914
164
900
0.914
163
920
0.913
163
940
0.915
162
960
0.916
162
S21
IS21I
^<t>
2.098
54
2.049
53
1.991
52
1.951
51
1.912
50
1.865
49
1.832
48
1.783
47
1.748
46
S12
I8«l
£ts>
0.037
58
0.038
58
0.038
58
0.039
59
0.040
59
0.041
59
0.042
59
0.043
59
0.043
59
S22
IS22I
z<D
0.343
0.345
0.349
0.352
0.355
0.359
0.362
0.366
0.369
-157
-157
-157
-158
-158
-158
-158
-159
-159
f
(MHz)
840
870
900
Table 2. Zjn and ZQL* versus Frequency
Zin
(Ohms)
1.5
4.4
18.4
1.7
4.7
18.0
1.5
4.8
14.9
ZOL*
(Ohms)
-26.3
-26.1
-26.2
VCE = 24 V, Ic = 0.3 A, P0 = 2.1 W
ZOL* = Conjugate of optimum load impedance into which the device operates at a given output power, voltage and frequency.