MRF857S Datasheet, PDF (1/2 Pages) Motorola, Inc – NPN SILICON RF POWER TRANSISTOR

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
The RF Line
NPN Silicon
RF Power Transistor
Designed for 24 Volt UHF large-signal, common emitter, class A linear
amplifier applications in industrial and commercial equipment operating in the
range of 800-960 MHz.
• Specified for VQE = 24 Vdc, IG = 0.3 Adc Characteristics
Output Power = 2.1 Watts CW
Minimum Power Gain = 12.5 dB
Minimum ITO = +43 dBm
Typical Noise Figure = 5.25 dB
• Characterized with Small-Signal S-Parameters and Series Equivalent
Large-Signal Parameters from 800-960 MHz
• Silicon Nitride Passivated
• 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1
VSWR @ 24 Vdc, Ic = 0.3 Adc and Rated Output Power
. Will Withstand RF Input Overdrive of 0.4 W CW
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
TELEPHONE: [phone]
[phone]
FAX: [phone]
MRF857S
CLASS A
800-960 MHz
2.1 W (CW), 24 V
NPN SILICON
RF POWER TRANSISTOR
CASE305D-01,
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
30
Vdc
Collector-Base Voltage
Emitter-Base Voltage
Total Device Dissipation @ TC = 50°C
Derate above 50°C
VCBO
VEBO
PD
55
4
17
0.114
Vdc
Vdc
Watts
W/"C
Operating Junction Temperature
TJ
200
"C
Storage Temperature Range
Tstg
-65to+150
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance (Tj = 15CPC, TC = 50°C)
Symbol
Max
Rejc
8.4
Unit
°c/w
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Ic = 20 mA, IB = 0)
Collector-Emitter Breakdown Voltage (Ic = 20 mA, VBE = 0)
Collector-Base Breakdown Voltage (Ic = 20 mA, Ig = 0)
Emitter-Base Breakdown Voltage (IE = 1 mA, Ic = 0)
Collector Cutoff Current (VCB = 24 V, IE = 0)
V(BR)CEO
28
V(BR)CES
55
V(BR)CBO
55
V(BR)EBO
4
!CES
—
35
—
Vdc
85
—
Vdc
85
—
Vdc
5
—
Vdc
—
1
mA
(continued)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> N.I Semi-Conductors is believed to be both accurate and reliable at the time of"going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NI Semi-Conductors encourages customers to verify that datasheets ;ire current before placing orders.
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