MRF607 Datasheet, PDF (2/2 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, (Jnc.
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FAX: [phone]
MRF607
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 25 mAdc, IB -0)
Collector -Emitter Breakdown Voltage
( l c - 2 5 mAdc. VBE -0)
Emitter-Base Breakdown Voltage
(IE =0.5 mAdc, lc = 0)
Collector Cutoff Current
(VCE = 10 Vdc, IB -Ol
VIBR]CEO
16
VIBRICES
36
VIBRIEBO
35
'CEO
-
ON CHARACTERISTICS
DC Current Gain
»C = 50 mAdc, VCE = 5.0 Vdcl
HFE
20
DYNAMIC CHARACTERISTICS
Output Capacitance
< VCB ~ !2 Vdc. IE = 0, f = 1.0 MHz)
Cob
-
FUNCTIONAL TEST (Figure 11
Co m mon -E mitter Amplifier Power Gain
<pcut = 1-75 W, Vcc = 12.5 Vdc, f - 175 MHz)
Collector Efficiency
<Pout = 1.75 W. VCG= 12.5 Vdc, f = 175MHz)
GPE
11.5
t?
50
FIGURE 1 - 175 MHz TEST CIRCUIT SCHEMATIC
-
Vdc
-
Vdc
-
Vdc
0.3
mAdc
150
-
IS
pF
-
dB
-
%
C1
LI
, <-N
MX
V._{J "'}
'"
i
J_ +
12.5 Vdc
Tcej—C-
x _{<r— \}
J•
tc3
C1
C2
C3.C4
C5
C6
2.7-15 pF, ARCO 461
9.0 180 pF, ARCO 463
5.0-80 pF. ARCO 462
1000pF UNELCO
5 (IF, 25 Vdc. TANTALUM
LI 1 Turn ff20 AWG. 3/8" ID
L2 3 Turns «0 AWG.3/8" ID
L3 0.22 uH Molded Choke
L4 0.15 WH Molded Choka
with FERROXCUBE
56590 65 3B Bead on
ground lead
Quality Semi-Conductors