MRF607 Datasheet, PDF (1/2 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

L-ConcLuctoi Lpi.oa.ucti., One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
The RF Line
NPN SILICON RF POWER TRANSISTOR
. . . designed for amplifier, frequency multiplier, or oscillator ap-
plications in military, mobile, marine and citizens band equipment.
Suitable for use as output driver or pre-driver stages in VHP and
UHF equipment.
• Specified 12.5 Volt, 175 MHz Characteristics -
Output Power = 1.75 Watts
Minimum Gain - 11 5 dB
Efficiency = 50%
• Characterized through 225MHz
MAXIMUM RATINGS
Rating
Symbol
1 Colleclor-6 muter Voltage
I Collector Base Voltage
VCEO
VCBO
! Emitter-Base Voltage
Collector Current - Continuous
VEBO
35
0.33
Total Device Dissipation <5> TQ - 75°C ( 1 }
3.5
Derate above 75°C
28
Slorage Temperature Range
Watts
mW/°C
TELEPHONE: [phone]
[phone]
FAX: [phone]
MRF607
1.75 W - 1 7 5 MHz
RFPOWER
TRANSISTOR
NPN SILICON
IR
L
E
SEATING
PLANE
—B
k;T-P i
t
D
Q
G
|N
s — x^
t
M
'V
/ STYLE 1
H/
PIN 1 EMITTER
2. BASE
3. COLLECTOR
MILLIMETERS! INCHES
aim MIN MAX MIN MAX
A 889 940 0350 0370
8 800 851 0315 0335
c 6.10 6 60 0240 0260
D 0406 0533 0016 0021
E 0 2 2 9 3 18 0.009 0 1 2 5
f 0406 0483 _JUUiii 0019
Q 4 8 3 5 3 3 0 190 0 2 1 0
H 0 7 1 1 0864 0028 0031
J 0 7 3 7 1 02 0.029 0040
K 1270
0500
L 635
0250
M 45° H OM
45° NOM
p
1.27
0050
Q
90° NOM
n 254
90" » 3M
0.100 -
CASE 79 02
T039
All JEOEC notK and dinwnsions apply.
Quality Semi-Conductors