MRF555 Datasheet, PDF (2/2 Pages) Motorola, Inc – RF LOW POWER TRANSISTOR NPN SILICON

MRF555
ELECTRICAL SPECIFICATIONS (Tease = 25°C)
STATIC
Symbol
Test Conditions
BVcEO
BVCES
BVEBO
ICES
HFE
Collector-Emitter Breakdown Voltage
(lc = 5 mAdc, IB = 0)
Collector-Emitter Sustaining Voltage
(lc = 5.0 mAdc, IB = 0)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, lc = 0)
Collector Cutoff Current
(VCE = 15Vdc, VBE = OVdc)
DC Current Gain
(lc = 100 mA, VCE = 5.0 Vdc) Both
Value
Win.
Typ.
Max.
Unit
16
-
-
Vdc
30
-
-
Vdc
3.0
-
-
Vdc
-
-
5
mA
50
-
200
-
DYNAMIC
Symbol
Test Conditions
Output Capacitance
COB
(VCB = 1 0 Vdc, IE = 0, f = 1 .0 MHz)
Value
Min.
Typ.
Max.
Unit
-
...
5.5
PF
FUNCTIINU
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
Power Gain
Test Circuit-Figure 1
GPE
Pout =1.5W, VCE=12.5Vdc 11
12.5
-
dB
f = 470 MHz
Collector Efficiency
Test Circuit-Figure 1
n
Pout =1.5W, VCE=12.5Vdc 50
60
-
%
f= 175 MHz
V
Load Mismatch
VSWR > 10:1 All Phase Angles
Test Circuit-Figure 1
Pout =1.5W, VCE=12.5Vdc No Degradation in Output Power
-
f = 175 MHz