MRF555 Datasheet, PDF (1/2 Pages) Motorola, Inc – RF LOW POWER TRANSISTOR NPN SILICON

tSetni-Conductoi tPiodueti, fine.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
Specified @ 12.5 V, 470 MHz Characteristics
Output Power = 1.5 W
Minimum Gain = 11 dB
Efficiency 60% (Typ)
Cost Effective PowerMacro Package
Electroless Tin Plated Leads for Improved Solderability
DESCRIPTION: Designed primarily for wideband large signal stages in
the UHF frequency range.
TELEPHONE: [phone]
[phone]
FAX: [phone]
MRF555
Power Macro
ABSOLUTE MAXIMUM RATINGS (Tease = 25° C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
Ic
Collector Current
Value
Unit
16
Vdc
30
Vdc
3.0
Vdc
500
mA
Thermal Data
p
D
Total Device Dissipation @ TC = 75°C
Derate above 75°C
3.0
Watts
40
mW/°C
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished bv N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
\ Semi-Conductors encourages customers to verity that datasheets arecurrent before placing orders.