MRF5015 Datasheet, PDF (2/2 Pages) Motorola, Inc – N-CHANNEL BROADBAND RF POWER FET

ELECTRICAL CHARACTERISTICS — continued (Tc = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 10 mAdc)
vGS(th)
1.25
2.3
3.5
Vdc
Drain-Source On-Voltage
(VQS = 10vdc, ID = 1Adc)
Forward Transconductance
(VDS = 10Vdc, ID = 1 Adc)
vDS(on)
—
9fs
1.2
—
0.375
Vdc
—
—
S
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 12.5 vdc, VGS = o, f = 1 MHZ)
Cjss
—
33
—
PF
Output Capacitance
(VDs = 12.5 Vdc, VGS = O, f = 1 MHz)
Reverse Transfer Capacitance
(vDs = 12.5 vdc, VGS = o, f = 1 MHZ)
CQSS
—
74
—
pF
crss
7
8.8
10.8
PF
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common-Source Amplifier Power Gain
(VDD = 12.5 Vdc, Pout = 15 W,
lDQ= 100mA)
Gps
f = 512 MHz
f= 175 MHz
Drain Efficiency
(VDD = 12-5 Vdc, Pout = 15 W,
IDQ= 100mA)
T|
f = 512 MHz
f= 175 MHz
Load Mismatch
V
(VDD = 15.5 Vdc, 2 dB Overdrive, f = 512 MHz,
Load VSWR = 20:1, All Phase Angles at Frequency of Test)
dB
10
11.5
—
15
%
50
55
—
55
No Degradation in Output Power
B1.B2
C1.C13
C2, C12
C3,C4,C10,011
C5, C9
C6
C7
C8
L1, L2
N1, N2
R1
R2
Ferrite Bead, Fair Rite Products
10uF, 50V, Electrolytic
0.1 nF, Chip Capacitor
120 pF, Chip Capacitor
0 to 20 pF, Trimmer Capacitor
36 pF, Chip Capacitor
43 pF, Chip Capacitor
30 pF, Chip Capacitor
7 Turns, 24 AWG 0.116" ID
Type N Flange Mount
1 kn, 1/4W, Carbon
470 kQ, 1/4W, Carbon
R3
Z1, Z11
22
Z3
Z4
Z5
Z6
27, Z8
29
210
Board
160 ii, 0.1 W Chip
Transmission Line*
Transmission Line*
Transmission Line*
Transmission Line*
Transmission Line*
Transmission Line*
Transmission Line+
Transmission Line*
Transmission Line*
Glass Teflon® 0.060"
+ Part of Capacitor Mount Socket
*See Photomaster
Figure 1. 512 MHz Narrowband Test Circuit Electrical Schematic