MRF5015 Datasheet, PDF (1/2 Pages) Motorola, Inc – N-CHANNEL BROADBAND RF POWER FET

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
The RF MOSFET Line
RF Power Field Effect Transistor
N-Channel Enhancement-Mode
Designed for broadband commercial and industrial applications at frequen-
cies to 520 MHz. The high gain and broadband performance of this device
makes it ideal for large-signal, common source amplifier applications in 12.5
volt mobile, and base station FM equipment.
• Guaranteed Performance at 512 MHz, 12.5 Volts
Output Power — 15 Watts
Power Gain — 10 dB Min
Efficiency — 50% Min
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• S-Parameter Characterization at High Bias Levels
• Excellent Thermal Stability
« All Gold Metal for Ultra Reliability
• Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 512 MHz, 2 dB Overdrive
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
TELEPHONE: [phone]
[phone]
FAX: [phone]
MRF5015
15 W, 512 MHz, 12.5 VOLTS
N-CHANNEL BROADBAND
RF POWER FET
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage (RGS = 1 M£J)
Gate-Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS
Characteristic
= 25°C unless otherwise noted.)
Symbol
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (V<3S = 0, IQ = 5 mAdc)
Zero Gate Voltage Drain Current (Vos = 15 Vdc, VQS = 0)
Gate-Source Leakage Current (VQQ = 20 Vdc, VQS = 0)
V(BR)DSS
toss
IGSS
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
Tj
Symbol
R9JC
Min
36
—
—
CASE 319-07, STYLE 3
Value
36
36
±20
6
50
0.29
-65 to +150
200
Max
3.5
Typ
Max
—
—
—
5
—
2
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°c
Unit
°C/W
Unit
Vdc
mAdc
nAdc
(continued)
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