MRF421 Datasheet, PDF (2/2 Pages) Motorola, Inc – RF POWER TRANSISTORS NPN SILICON

ELECTRICAL CHARACTERISTICS - continued (Tc = 25 C unless otherwise noted )
Characteristic
Symbol
Min
Typ
Max
ON CHARACTERISTICS
DC Current Gain
(lc = 5.0Adc. VCE = 5.0Vdc)
HFE
10
70
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB= 12.5Vdc, IE = 0, f = 1.0MHz)
Cob
—
550
800
FUNCTIONAL TESTS
Common-Emitter Amplifier Power Gain
(Vcc = 12.5Vdc, Pout = 100 W, lc(max, = 10 Adc,
ICQ= 150mAdc. f = 30, 30.001 MHz)
GPE
10
Collector Efficiency
(Vcc= 12.5 Vdc. Pout= 100W, lc(™x)= 10 Adc,
ICQ = 1 50 mA, f = 30, 30.001 MHz)
n
40
Intermodulation Distortion (1)
IMD
( V C E = 12.5 Vdc, Poul = 100 W. lc = 10 Adc.
ICQ = 150mA, f = 30, 30.001 MHz)
NOTE,
I. To proposed EIA method of measurement. Reference peak envelope power.
12
-33
-30
1
BIAS
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L4
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t
X
L5
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? >C9 ? ^C10
12
1
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INPUT S L
C2 j L1
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L3
Unit
—
PF
dB
%
dB
S1
12.5V*
/
\
/ RF
N OUTPUT
C1.C2.C4— 170-780 pF,ARCO 469
C3 — 80-480 pF. ARCO 466
CS.C7.C10— ERIE 0.1 uF. 100 V
C6 — MALLORY 500 uF @ 15 V Electrolytic
C9 — 100 uF. 15 V Electrolytic
C8 — 1000 pF, 350 V UNDERWOOD
R1 — 10 U 25 Watt Wirewound
R2 — 10 U, 1.0 Watt Carbon
CR1 - 1N4997
LI — .3 Turns, #16 Wire, 5/16" I.D., 5/16" Long
L2 — 12 Turns, #16 Enameled Wire Closewound, 1/4" I.D.
L3 — 1-3/4 Turns, 1/8" Tubing, 3/8" I.D.. 3/8" Long
L4 — 10uH Molded Choke
L5 — 10 Ferme Beads — FERROXCUBE #56-590-65/36
Figure 1. 30 MHz Test Circuit Schematic