MRF421 Datasheet, PDF (1/2 Pages) Motorola, Inc – RF POWER TRANSISTORS NPN SILICON

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
MRF421
TELEPHONE: [phone]
[phone]
FAX: [phone]
Designed primarily for application as a high-power linear amplifier from 2.0 Product Image
to 30 MHz.
Specified 12.5 V, 30 MHz characteristics —
Output power = 100 W (PEP)
Minimum gain = 10 dB
Efficiency = 40%
Intermodulation distortion @ 100 W (PEP) — IMD = -30 dB (min.)
100% tested for load mismatch at all phase angles with 30:1 VSWR
CASE 211-11
MAXIMUM RATINGS
Collector-Emitter Voltage
Rating
Collector-Base Voltage
Emitter-Base Voltage
Collector Current — Continuous
Withstand Current — 10s
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VCEO
VCBO
VEBO
lc
—
PD
Tstg
Symbol
RHJC
Value
20
45
3,0
20
30
290
166
-65 to 4 150
Max
0. 6
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/*C
-c
Unit
»C/W
ELECTRICAL CHARACTERISTICS (Tc = 25=C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (lc = 50 mAdc; IB = 0}
V(BR)CEO
20
—
Collector-Emitter Breakdown Voltage (lc = 200 mAdc. VBE = 0)
VIBRJCES
45
—
Collector-Base Breakdown Voltage (lc = 200 mAdc, IE = 0)
V(BR)CBO
45
—
Emitter-Base Breakdown Voltage (IE = 10 mAdc. lc = 0}
V(BR)EBO
3.0
—
Collector Cutoff Current (VCE = 16 Vdc, VBE = 0, Tc = 25"C)
ICES
—
_
—
Vdc
—
Vdc
—
Vdc
—
Vdc
10
mAdc
(continued)
NJ Semiconductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use
VI Semi-Conductorsencourages customers to verity that datasheets are current before phcing orders
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