MRF393 Datasheet, PDF (2/2 Pages) Motorola, Inc – BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS (1)
Collector-Emitter Breakdown Voltage (Ic = 50 mAdc, IB = 0)
Collector-Emitter Breakdown Voltage (Ic = 50 mAdc, VBE ~ °)
Emitter-Base Breakdown Voltage (l^ = 5.0 mAdc, Ic = 0)
Collector Cutoff Current (VCB = 30 Vdc, IE = 0)
V(BR)CEO
V(BR)CES
V(BR)EBO
'CBO
ON CHARACTERISTICS (1)
DC Current Gain (Ic = 1 .0 Adc, VCE = 5.0 Vdc)
hFE
DYNAMIC CHARACTERISTICS (1)
Output Capacitance (VQB = 28 Vdc, IE = 0, f = 1 .0 MHz)
Cob
FUNCTIONAL TESTS (2) — See Figure 1
Common-Emitter Amplifier Power Gain
Gpe
(VCC = 28 Vdc, Pout = 100 W, f = 500 MHz)
Collector Efficiency
ri
(VCC = 28 Vdc, Pout = 100 W, f = 500 MHz)
Load Mismatch
V
(VCc = 28 Vdc,Pout = 100 W, f = 500 MHz,
VSWR = 30: 1 , all phase angles)
NOTES:
1. Each transistor chip measured separately.
2. Both transistor chips operating in push-pull amplifier.
Win
Typ
Max
Unit
30
—
—
Vdc
60
—
—
Vdc
4.0
—
_
Vdc
_
—
5.0
mAdc
20
—
100
—
40
75
95
PF
7.5
8.5
—
dB
50
55
—
%
No Degradation in Output Power
C10
L5
I i 1 ^{i ;} C9
*-p» L^r. i
28V
H=H 14
1 ^C13
;C15
C16
C1.C2, C7, C8 — 240 pF 100 mil Chip Cap
C3 — 15 pF 100 mil Chip Cap
C4 — 24 pF 100 mil Chip Cap
C5 — 33 pF 100 mil Chip Cap
C6 —12pF 100 mil Chip Cap
C9, C13— 1000 pF 100 mil Chip Cap
C10, C14 — 680 pF Feedthru Cap
C11, C15 —0.1 |aF Ceramic Disc Cap
C12, C16 — 5 0 n F 5 0 V
L1, L2 — 0.15 nH Molded Choke with Ferrite Bead
L3, L4 — 2-1/2 Turns #20 AWG 0.200" ID
L5, L6 — 3-1/2 Turns #18 AWG 0.200" ID
B1, B2 — Balun 50 £2 Semi Rigid Coax, 86 mil OD, 4" Long
Z1, Z2 — 850 mil Long x 125 mil W. Microstrip
Z3, Z4 — 200 mil Long x 125 mil W. Microstrip
Z5, Z6 — 800 mil Long x 125 mil W. Microstrip
Board Material — 0.0325" Teflon-Fiberglass, er = 2.56,
1 oz. Copper Clad both sides.
Figure 1. 500 MHz Test Fixture