MRF393 Datasheet, PDF (1/2 Pages) Motorola, Inc – BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
ioducti, One.
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The RF Line
NPN Silicon Push-Pull
RF Power TVansistor
. . . designed primarily for wideband large-signal output and driver amplifier
stages in the 30 to 500 MHz frequency range.
• Specified 28 Volt, 500 MHz Characteristics —
Output Power = 100 W
Typical Gain = 9.5 dB (Class AB); 8.5 dB (Class C)
Efficiency = 55% (Typ)
• Built-in Input Impedance Matching Networks for Broadband Operation
• Push-Pull Configuration Reduces Even Numbered Harmonics
• Gold Metallization System for High Reliability
• 100% Tested for Load Mismatch
MRF393
100 W, 30 to 500 MHz
CONTROLLED "Q"
BROADBAND PUSH-PULL
RF POWER TRANSISTOR
NPN SILICON
The MRF393 \s two transistors in a single package with separate base and collector leads
and emitters common. This arrangement provides the designer with a space saving
device capable of operation in a push-pull configuration.
PUSH-PULL TRANSISTORS
CASE744A-01
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
Storage Temperature Range
Junction Temperature
Symbol
VCEO
VCBO
VEBO
ic
PD
Tstg
Tj
Value
30
60
4.0
16
270
1.54
-6510+150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°c
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RSJC
0.65
°CM/
NOTE:
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF push-pull
amplifier.
^_^
Quality Semi-Conductors