MRF374 Datasheet, PDF (2/3 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

J
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Una.
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (per Side)
(VQS = 0 Vdc, ID =1 jiA per Side)
V(BR)DSS
Zero Gate Voltage Drain Current (per Side)
IDSS
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate-Source Leakage Current (per Side)
'ass
(VGS = 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage (per Side)
(VDs = 1 0 V, ID = 200 nA per Side)
VGS(th)
Gate Quiescent Voltage (per Side)
(VDS = 28 V, ID = 100 mA per Side)
VGS(Q)
Drain-Source On-Voltage (per Side)
(VGS = 1 0 V, ID = 3 A per Side)
VDS(on)
Forward Transconductance (per Side)
9fs
(VDs = 10V, ID = 3 A per Side)
DYNAMIC CHARACTERISTICS (1>
Input Capacitance (per Side)
ciss
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Output Capacitance (per Side)
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Coss
Reverse Transfer Capacitance (per Side)
Crss
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
FUNCTIONAL CHARACTERISTICS, TWO-TONE TESTING <2>
Common Source Power Gain
Gps
(VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
Drain Efficiency
n
(VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
Intermodulation Distortion
IMD
(VDD = 2S Vdc, Pout = 100 W PEP, IDQ = 400 mA,
f1 = 857 MHz, f2 = 863 MHz)
Load Mismatch
(VDD = 28 Vdc, Pout = 100 W CW, IDQ = 400 mA,
f = 860 MHz, VSWR 5:1 at All Phase Angles of Test)
TYPICAL TWO-TONE BROADBAND
Common Source Power Gain
Gps
(VDD = 28 Vdc, Pou, = 100 W PEP, IDQ = 500 mA,
f1 = 857 MHz, f2 = 863 MHz)
Drain Efficiency
n
(VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 500 mA,
f1 = 857 MHz, f2 = 863 MHz)
Intermodulation Distortion
IMD
(VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 500 mA,
f1 = 857 MHz, f2 = 863 MHz)
(1) Each side of device measured separately.
(2) Measured in push-pull configuration.
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Min
Typ
Max
Unit
65
-
-
—
—
—
-
Vdc
1
|jAdc
1
(iAdc
2
3.5
4
Vdc
3
4.2
5
Vdc
-
0.56
0.8
Vdc
2.2
2.8
—
S
-
80
-
PF
—
45
—
PF
—
3.5
—
PF
12.5
13.5
dB
30
36
%
-28
-31
dB
No Degradation in Output Power
12
dB
36
%
-34
dB