MRF374 Datasheet, PDF (1/3 Pages) Advanced Semiconductor – NPN SILICON RF POWER TRANSISTOR

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Una.
The RF MOSFET Line
RF Power Field-Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies from 470 - 860 MHz. The high gain and broadband performance of this
device make it ideal for large-signal, common source amplifier applications in 28
volt transmitter equipment.
• Typical Two-Tone Performance @ 860 MHz, 28 Volts, Narrowband Fixture
Output Power- 100 Watts PEP
Power Gain- 13.5dB
Efficiency - 36%
IMD--31 dBc
• Typical Performance at 860 MHz, 28 Volts, Broadband Fixture
Output Power - 100 Watts PEP
Power Gain- 12 dB
Efficiency - 36%
IMD--34dBc
• 100% Tested for Load Mismatch Stress at All Phase Angles
with 5:1 VSWR @ 28 Vdc, 860 MHz, 100 Watts CW
• Excellent Thermal Stability
• Characterized with Differential Large-Signal Impedance Parameters
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MRF374
470 - 860 MHz, 100 W, 28 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375F-04
NI-650
MAXIMUM RATINGS
Drain-Source Voltage
Rating
Gate-Source Voltage
Drain Current - Continuous (per Side)
Total Device Dissipation @ Tc = 25''C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
ID
PD
Ts»g
Tj
Symbol
R8JC
Value
65
±20
7
270
1.25
-65 to +150
200
Max
0.65
Unit
Vdc
Vdc
Adc
W
W/°C
°C
"C
Unit
°c/w
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Quality Semi-Conductors