MRF329 Datasheet, PDF (2/2 Pages) Motorola, Inc – BROADBAND RF POWER TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (Tc = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ | Max
Unit
OFF CHARACTERISTICS (continued)
Collector-Base Breakdown Voltage
(lc = 80 mAdc, IE = 0)
Collector Cutoff Current
(VCB = so vdc, IE = o)
V(BR)CBO
60
—
—
Vdc
!CBO
—
—
5.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(lc = 4.0 Adc, VCE- 5.0 Vdc)
hFE
20
^
80
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB =28 Vdc. IE= o. f = 1 .0 MHz)
Cob
—
95
125
PF
FUNCTIONAL TESTS (Figure 1)
Common-Emitter Amplifier Power Gain
(VCc = 28 Vdc, Pout = 100 W, f = 400 MHz)
Collector Efficiency
(Vcc = 28 Vdc, Pout = 1 00 W, f = 400 MHz)
GPE
7.0
9.7
—
dB
1
50
60
—
%
Load Mismatch
(Vcc = 28 Vdc, Pout = 100 W, f = 400 MHz,
VSWR = 3:1 all angles)
V
No Degradation in Output Power
V
INPUT/
Z1
L3
C12
! L1
L2 •
OUT
28 Vdc
C13
O-
C14
C10
IIfI
'""
RF
li^J.
OUTPUT
C3
C4
;cs
<?C9 ?
C1, C2, C7, C9— 1.0-20 pF Johanson (JMC 5501)
C3, C4 — 36 pF 100 mil Chip Cap (ATC)
C5, C6 — 50 pF 100 mil Chip Cap (ATC)
C8 — 30 pF 100 mil Chip Cap (ATC)
C10 — 2.0-150 pF 100 mil Chip Caps in Parallel (ATC)
C11 — 1.0-10 pF Johanson (JMC 5201)
C12, C13—1000pFUNELCOFeedthru
C14 — 0.1 nF Erie Redcap
L1 — 0.15 nH Molded Choke with Ferrite Bead
(Ferroxcube #56-590-65/46) on Ground End
L2 — 4 Turns #18 AWG, 1/4" ID
L3 — Ferroxcube VK200-19/4B
Z1 — Microstrip Line 2300 mils L x 210 mils W
Z2 — Microstrip Line 2300 mils L x 280 mils W
Board — Glass Teflon, t = 0.062", £r = 2.56
Figure 1. 400 MHz Test Circuit