MRF329 Datasheet, PDF (1/2 Pages) Motorola, Inc – BROADBAND RF POWER TRANSISTOR NPN SILICON

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
t Una.
The RF Line
NPN Silicon
RF Power Transistor
. . . designed primarily for wideband large-signal output and driver amplifier
stages in the 100 to 500 MHz frequency range.
• Specified 28 Volt, 400 MHz Characteristics —
Output Power = 100 Watts
Minimum Gain = 7.0 dB
Efficiency = 50% (Min)
• Built-in Matching Network for Broadband Operation Using Double Match
Technique
• 100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR
• Gold Metallization System for High Reliability
TELEPHONE: [phone]
[phone]
FAX: [phone]
MRF329
100 W, 100 to 500 MHz
CONTROLLED "Q"
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 333-04, STYLE 1
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current — Continuous
— Peak
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (2)
Symbol
VCEO
VCBO
VEBO
ic
PD
Tstg
Symbol
Rejc
Value
30
60
4.0
9.0
12
270
1.54
-65to+150
Max
0.65
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
Unit
°C/W
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 80 mAdc, IB = 0)
V(BR)CEO
30
—
—
Vdc
Collector-Emitter Breakdown Voltage
(lc = 80 mAdc, VBE = 0)
V(BR)CES
60
—
—
Vdc
Emitter-Base Breakdown Voltage
(IE = 8.0 mAdc, lc = 0)
V(BR)EBO
4.0
—
—
Vdc
NOTES:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
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