MRF321 Datasheet, PDF (2/2 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (Tc = 25°C unless otherwise noted.)
Characteristic
1 Symbol
Min
Typ
Max | Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1 .0 MHz)
Cob
—
10
12
PF
FUNCTIONAL TESTS (Figure 1)
Common-Emitter Amplifier Power Gain
(VCc = 28 Vdc, Pou, = 10 W, f = 400 MHz)
GPE
12
13
—
dB
Collector Efficiency
(Vcc = 28 Vdc,Pout = 10 W, f = 400 MHz)
'1
50
60
—
%
Load Mismatch
(Vcc = 28 Vdc,Pout = 10 W, f = 400 MHz,
VSWR = 30:1 all phase angles)
V
No Degradation in Output Power
INPUT / Q
28V
OUTPUT
C1, C2, C3— 1.0-20 pF Johanson Trimmer (JMC 5501)
C3, C4 — 47 pF ATC Chip Capacitor
C5, C10 — 0.1 uF Erie Redcap
C7 —0.5-10 pF Johanson Trimmer (JMC 5201)
C8 — 0.018 uF Vitramon Chip Capacitor
C9 — 200 pF UNELCO Capacitor
C11.C12 — 680 pF Feedthru
C13 — 1.0 uF, 50 Volt Tantalum Capacitor
D1 — 1N4001
L1 — 0.33 (J.H Molded Choke with Ferroxcube Bead
(Ferroxcube 56-590-65/4B) on Ground End of Coil
L2 — 4 Turns #20 Enamel. 1/8" ID
L3 — 6 Turns #20 Enamel, 1/4" ID
L4 — Ferroxcube VK200-19/4B
R1 —5.1 n, 1/4 Watt
R2 — 120 £2, 1.0 Watt
R3 —20S'J, 1/2 Watt
R4 — 47 £2, 1/2 Watt
Z1 — Microstrip 0.1" W x 1.35" L
Z2 — Microstrip 0.1" W x 0.55" L
Z3 — Microstrip 0.1" W x 0.8" L
Z4 — Microstrip 0.1" W x 1.75" L
Board — Glass Teflon, ER = 2.56, t = 0.062"
Input/Output Connectors — Type N
Figure 1. 400 MHz Test Circuit Schematic