MRF321 Datasheet, PDF (1/2 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
The RF Line
NPN Silicon
RF Power Transistor
. . . designed primarily for wideband large-signal driver and predriver amplifier
stages in 200-500 MHz frequency range.
• Guaranteed Performance at 400 MHz, 28 Vdc
Output Power = 10 Watts
Power Gain = 12 dB Min
Efficiency = 50% Min
• 100% Tested for Load Mismatch at all Phase Angles with 30:1VSWR
• Gold Metallization System for High Reliability
• Computer-Controlled Wirebonding Gives Consistent Input Impedance
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MRF321
10W, 400MHz
RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current — Continuous
— Peak
VCEO
VCBO
VEBO
lc
Total Device Dissipation @ TA = 25°C (1)
PD
Derate above 25"C
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Value
33
60
4.0
1.1
1.5
27
160
-65to+150
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/"C
°C
Symbol
RBJC
CASE 244-04,
Max
6.4
Unit
°C/W
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lc = 20 mAdc, IB = 0)
V(BR)CEO
33
—
—
Vdc
Collector-Emitter Breakdown Voltage
(lc = 20 mAdc, VBE = 0)
Collector-Base Breakdown Voltage
(lc = 20 mAdc, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 2.0 mAdc, lc = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
V(BR)CES
60
—
—
Vdc
V(BR)CBO
60
—
—
Vdc
V(BR)EBO
4.0
—
—
Vdc
ICBO
—
—
1,0
mAdc
ON CHARACTERISTICS
DC Current Gain
(lc = 500mA, VCE = 5.0Vdc)
HFE
20
—
80
—
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.