MRF284 Datasheet, PDF (2/2 Pages) Motorola, Inc – RF Power Field-Effect Transistors

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)
Characteristic
Symbol
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 150 nAdc)
vGS(th)
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 200 mAdc)
VGS(q)
Drain-Source On-Voltage
(VQS = 10Vdc, (D = 1.0Adc)
VDS(«1)
Forward Transconductance
Qfe
(VDS = 10 Vdc, lo = 1-OAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
ciss
(VrjS = 26 Vdc, VGS = 0, f = 1 .0 MHz)
Output Capacitance
(VDS = 26 Vdc, VQS = 0, f = 1 .0 MHz)
CQSS
Reverse Transfer Capacitance
Crss
(VDS = 26 Vdc, VQS = 0, f = 1 .0 MHz)
FUNCTIONAL TESTS (in Motorola Test Fixture)
Common-Source Power Gain
GPS
<VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,
11 = 2000.0 MHz, f2 = 2000.1 MHz)
Drain Efficiency
1
(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Intemnodulation Distortion
'MO
(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,
(1 = 2000.0 MHz, f2 = 2000.1 MHz)
Input Return Loss
IRL
(VDD » 26 Vdc, Pout = 30 W, IDQ = 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Common-Source Amplifier Power Gain
Gp5
(VDO = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Drain Efficiency
1
(VDD = 26 Vdc, Pout = 30 W PEP, IDO = 200 mA,
11 = 1930.0 MHz, f2 = 1930.1 MHz)
Intel-modulation Distortion
IMD
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Input Return Loss
"RL
(VDD = 26 Vdc, POU, = 30 W PEP, IDQ = 200 mA,
(1 = 1930.0 MHz, (2 = 1930.1 MHz)
Common-Source Amplifier Power Gain
GPS
(VOD = 26 Vdc. Pout = 30 W CW, IDQ = 200 mA,
f1 = 2000.0 MHz)
Drain Efficiency
1
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA,
f 1 = 2000.0 MHz)
Output Mismatch Stress
v
(VDD = 26 Vdc, Pom = 30 W CW, IDQ = 200 mA,
f1 = 2000.0 MHz, VSWR = 10:1.
at All Phase Angles)
Mln
Typ
Max
Unit
2.0
3.0
4.0
Vdc
3.0
4.0
5.0
Vdc
—
0.3
0.6
Vdc
1.0
1.5
—
S
—
37
—
PF
—
23
—
pF
~-
1.2
—
PF
9
10.5
"
dB
30
33
%
-33
-29
dBc
9
24
dB
9
10.7
dB
33
%
-33
dBc
9
15
dB
8.5
10.7
dB
35
%
No Degradation In Output Power
Quality Semi-Conductors