MRF284 Datasheet, PDF (1/2 Pages) Motorola, Inc – RF Power Field-Effect Transistors

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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Advance Information
The RF Sub-Micron MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for PCN and PCS base station applications at frequencies from
1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier
applications. To be used in class A and class AB for PCN-PCS/cellular radio
and wireless local loop.
• Specified Two-Tone Performance @ 2000 MHz, 26 Volts
Output Power = 30 Watts (PEP)
Power Gain = 10 dB
Efficiency = 30%
Intermodulation Distortion = -30 dBc
• Typical Single-Tone Performance at 2000 MHz, 26 Volts
Output Power = 30 Watts (CW)
Power Gain = 9 dB
Efficiency = 45%
• Characterized with Series Equivalent Large-Signal Impedance
Parameters
• S-Parameter Characterization at High Bias Levels
• Excellent Thermal Stability
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30
Watts (CW) Output Power
• Gold Metallization for Improved Reliability
MAXIMUM RATINGS
Rating
Symbol
Drain-Source Voltage
Gate-Source Voltage
Total Device Dissipation @ Tc = 25°C
Derate above 25°C
VDSS
VGS
PD
Storage Temperature Range
Tstg
Operating Junction Temperature
Tj
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
RWC
ELECTRICAL CHARACTERISTICS <TC = 25°C unless otherwise noted)
Characteristic
| Symbol | Mln
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VQS = 0,lD = 10nAdc)
V(BH)DSS
65
Zero Gate Voltage Drain Current
(VDS - 20 Vdc. VGS = 0)
IDSS
—
Gate-Source Leakage Current
(VGS = 20 Vdc, VDS = 0)
IGSS
—
MRF284S
30 W, 2000 MHz, 26 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE360B-01,
(MRF284,
CASE 360C-03,
(MRF284S)
Value
65
±20
87.5
0.5
-65 to +150
200
Max
2.0
Unit
Vdc
Vdc
Watts
W/"C
°c
°c
Unit
°c/w
Typ
Max | Unit
—
—
Vdc
—
1.0
uAdc
—
10
uAdc
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
NJ Semiconductors reserves the right to change test conditions, parameter limits and package dimensions without
nonce, rntannnlion urmshed b> NJ Sem.-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semiconductors assumes no responsibility for any errors or omissions discovered in its *°e
NI Semi-t umluclor* encourages customers ti> verify that datasheets nre current before placing orders.