MRF247 Datasheet, PDF (2/2 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.)
Characteristic
| Symbol |
ON CHARACTERISTICS
DC Current Gain
hFE
(1C = 5.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
Cob
(VCB = 1 s Vdc, iE = o, f = 1 .0 MHZ)
FUNCTIONAL TESTS
Common-Emitter Amplifier Power Gain
(Vcc = 12-5 Vdc, Pout = 75 Watts, f = 175 MHz)
GpE
Collector Efficiency
T!
(Vcc = 12-5 Vdc, Pout = 75 Watts, f = 175 MHz)
Load Mismatch
V
(Vcc = 12-5 Vdc, Pout = 75 Watts, f = 175 MHz,
VSWR = 30: 1 All Phase Angles)
Min
Typ
Max
Unit
10
75
150
—
—
235
300
PF
7.0
8.5
—
dB
55
60
—
%
No Degradation in Output Power
l ^rJ
E ^«...
LJ
NOTES:
1. FLANGE IS ISOLATED IN ALL STYLES.
INCHES
P*M W4 MAX
A 24.38 25.14
6 12.45 12.95
C
5.97
7.62
D
5.33
5.58
E 216 3.04
F 506 5.33
H 18.29 18.54
J
0.10
0.15
K 10,29 11.17
L
3.81
4.06
N
3.81
4.31
q
2.92
3.30
R
3.05
3.30
u 11.94 12.57
MILLIMETERS
HIM MAX
0.960 0.990
0.490 0.510
0.235 0.300
0.210 0.220
0.085 0.120
0.200 0.210
0.720 0.730
0.004 0.006
0.405 0.440
0.150 0.160
0.150 0.170
0.115 0.130
0.120 0.130
0.4/0 0.495
STYLE 1:
PIN1. EMITTER
2. COLLECTOR
3. EMITTER
4. BASE