MRF247 Datasheet, PDF (1/2 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
usA The RF Line
NPN Silicon
RF Power Transistor
The MRF247 is designed for 12.5 Volt VHP large-signal amplifier applications
in industrial and commercial FM equipment operating to 175 MHz.
• Specified 12.5 Volt, 175 MHz Characteristics —
Output Power = 75 Watts
Power Gain = 7.0 dB Min
Efficiency = 55% Min
• Characterized With Series Equivalent Large-Signal Impedance Parameters
• Internal Matching Network Optimized for Minimum Gain Frequency Slope
Response Over the Range 136 to 175 MHz
• Load Mismatch Capability at Rated Pout and Supply Voltage
TELEPHONE: [phone]
MRF247
75 W, 175 MHz
CONTROLLED Q
RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current — Peak
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (2)
ELECTRICAL CHARACTERISTICS He = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 100mAdc, IB = O)
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
V(BR)CES
Emitter-Base Breakdown Voltage
(1^ = 10 mAdc, lc = 0)
V(BR)EBO
Symbol
VCEO
VCBO
VEBO
'c
PD
Tstg
Symbol
Rejc
Min
18
36
4.0
CASE 316-01,
Value
18
36
4.0
20
250
1.43
-65 to -1-150
Max
0.7
Typ
Max
—
—
—
—
—
—
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
Unit
°C/W
Unit
Vdc
Vdc
Vdc
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