MRF171A Datasheet, PDF (2/2 Pages) Tyco Electronics – MOSFET BROADBAND RF POWER FET

ELECTRICAL CHARACTERISTICS - continued (Tc = 25 C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(Vos = 1OV, ID = 50mA)
Drain-Source On-Voltage
(VGS = 10V,ID = 3 A)
Forward Transconductance
( V D S = 1 0 V , ID = 2 A)
vGS(th)
1.5
2.5
4.5
Vdc
__
vDS(on)
1.0
V
9fs
1.4
1.8
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDs = 28 V, VGS = 0, f = 1 .0 MHz)
Output Capacitance
(VDS =28 v> VGS = o, f = 1 .0 MHZ)
Reverse Transfer Capacitance
<VDS = 28 v. VGS = o, f = 1 .0 MHZ)
p.
^ISS
—
60
—
PF
coss
_^
70
—
PF
Crss
8
—
PF
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain
(VDD = 28 V, Pout = 45 W, f = 150 MHz, IDQ = 25 mA)
Drain Efficiency
(VDD = 28 V, Pout = 45 W, f = 1 50 MHz,IDQ = 25 mA)
Electrical Ruggedness
(VDD =28 v. pout = 45 W, f = 150 MHz,IDQ = 25mA,
VSWR 30:1 at All Phase Angles)
Gps
17
19.5
—
dB
n
60
70
—
%
No Degradation in Output Power
TYPICAL FUNCTIONAL TESTS (SSB)
Common Source Power Gain
(VDD = 28 v, pout = 30 w (PEP), IDQ = 100 mA,
f = 30; 30.001 MHz)
Drain Efficiency
(VDD = 28 V, Pout = 30 W (PEP), IDQ = 100 mA,
f = 30; 30.001MHz)
Intermodulation Distortion
(VDD = 28 v, pout = so w (PEP), IDQ = 100 mA,
f= 30; 30.001 MHz)
Gps
_
20
—
dB
n
—
50
—
%
IMD(d3)
—
-32
—
dB