MRF171A Datasheet, PDF (1/2 Pages) Tyco Electronics – MOSFET BROADBAND RF POWER FET

•sSsmi-Conductoi ZPtoauati, fine.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
The RF MOSFET Line
RF Power Field-Effect Transistor
N-Channel Enhancement-Mode MOSFET
Designed primarily for wideband large-signal output and driver stages from
30-200 MHz.
• Guaranteed Performance at 150 MHz, 28 Vdc
Output Power = 45 Watts
Power Gain = 17 dB (Min)
Efficiency = 60% (Min)
• Excellent Thermal Stability, Ideally Suited for Class A Operation
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• 100% Tested for Load Mismatch At All Phase Angles with 30:1 VSWR
• Low Crss - 8 pF@VDS= 28V
n,
• Gold Top Metal
Typical Data For Power Amplifier Applications in Industrial,
Commercial and Amateur Radio Equipment
• Typical Performance at 30 MHz, 28 Vdc
Output Power = 30 Watts (PEP)
Power Gain = 20 dB (Typ)
os
Efficiency = 50% (Typ)
IMD(d3) (30 Watts PEP) -32 dB (Typ)
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MRF171A
45 W, 150MHz
MOSFET BROADBAND
RF POWER FET
aQ^
1— ^0^1
CASE 211-07,
MAXIMUM RATINGS
Rating
Drain-Gate Voltage
Drain-Gate Voltage (RQS = 1 -0 MJJ)
Gate-Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)
Characteristic
| Symbol
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(!D = 50mA, VGS =0)
Zero Gate Voltage Drain Current
(vGs = o. VDS = 28 v)
Gate-Source Leakage Current
<VGS = 20 v, VDS = °)
V(BR)DSS
toss
!GSS
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
Tj
Symbol
RGJC
Min
65
—
—
Value
65
65
±20
4.5
115
0.66
-65to+150
200
Max
1.52
Typ | Max
80
—
1.0
—
1.0
Unit
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
°C
Unit
°c/w
Unit
Vdc
mAdc
(jAdc
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.