MRF136 Datasheet, PDF (2/2 Pages) Motorola, Inc – N-CHANNEL MOS BROADBAND RF POWER FETs

MRF136, MRF136Y
ELECTRICAL CHARACTERISTICS (Tc - 25°C unleu othenwne noted)
Chincterlitlc
Symbol
OFF CHARACTERISTICS (NOTE 1)
Drain-Source Breakdown Voltage
(VQS - 0. ID • 5 mA)
Zero-Gate Voltage Drain Current
(VDS - 28 V, VGS - 01
Gate-Source Leakage Current
(VGS = 40v, VDS - 01
VIBRIDSS
IDSS
IGSS
ON CHARACTERISTICS (NOTE 1)
Gate Threshold Voltage
(VDS = 10v, ID - 25 mAi
VGS(th)
Forward Transconductance
«t
(VDS = 10 v. ID - 250 mA)
DYNAMIC CHARACTERISTICS (NOTE 1)
Input Capacitance
Cis.
(VDS = 28 v, VQS = o, f = i MH'>
Output Capacitance
'•oat
(VDS = 28 v,VQS = o, i= i MHZ)
Reverse Transfer Capacitance
Cr.a
(vos - 28 v, VGS - "• ' - 1 MHz>
FUNCTIONAL CHARACTERISTICS (NOTE 2)
Noise Figure
(VDS = 28 Vdc. ID = 500 mA, f = 150 MHz)
MRF136
NF
Common Source Power Gain (Figure 1)
MRF136
Gps
(VDD = 28 Vdc. Pout = 16 W, f = 180 MHz, IDQ = 25 mA)
Common Source Power Gain (Figure 2)
MRF136Y
GP«
(VDD = 28 Vdc, Pout = 30 W, f = 150 MHz, IDQ = 100 mA)
Drain Efficiency (Figure 1)
MRF136
•n
(VDD = 28 Vdc, Pout = 15 W, f » 150 MHz, IDQ - 25 mA)
Drain Efficiency (Figure 2)
MRF136Y
1
(VDD = 28 Vdc, Pout = 30 W. f = 150 MHz, IDQ = 100 mA)
Electrical Ruggedness (Figure 1)
MRF136
</>
(VDD = 28 Vdc. Pout = 15 W, f = 150 MHz, IDQ - 25 mA,
VSWR 30:1 at all Phase Angles)
Electrical Ruggedness (Figure 2)
MRF136Y
(VDD • 28 Vdc, Pout - 30 W, f = 150 MHz. I0Q = 100 mA,
*
VSWR 30:1 at all Phase Angles)
Notn: 1. For MRF138Y, each lid. muiurtd Mparattly.
2. For MRF136Y meaiured in puih-pull configuration.
TVP
Mix
Untt
66
—
—
Vdc
—
—
2
mAde
—
—
1
AiAdc
1
3
250
400
6
Vdc
—
fflrflnOS
—
24
—
pF
—
27
—
pF
—
5.5
—
PF
—
1
—
dB
13
16
—
dB
12
14
—
dB
50
60
—
%
50
54
—
%
No Degradation in Output Power
No Degradation in Output Power